SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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SMD transistor M05
Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE
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10/2M
SMD transistor M05
smd TRANSISTOR code m05
wy smd transistor
UPD5740
NE66200
TRANSISTOR m05 smd
UPD5740T6N
UPG2159T6R
SMD transistor M05 driver
50 VOLTS 5 amp smd sot-89 TRANSISTOR
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44-PIN
Abstract: UPB1009K VP215 6128MHZ
Text: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption
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UPB1009K
PB1009K
Hz/16
44-PIN
UPB1009K
VP215
6128MHZ
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gps frequency synthesizer
Abstract: 44-PIN UPB1009K VP215 ic 565 application frequency synthesizer
Text: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption
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UPB1009K
PB1009K
Hz/16
HS350
gps frequency synthesizer
44-PIN
UPB1009K
VP215
ic 565 application frequency synthesizer
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2183T6C
PG2183T6C
16-pin
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NEC RF Switch CMOS
Abstract: No abstract text available
Text: DATA SHEET CMOS INTEGRATED CIRCUIT PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT Double Pole Double Throw switch which is developed for mobile communications, wireless communications and another RF switching applications.
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PD5738T6N
PD5738T6N
NEC RF Switch CMOS
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. <R> This device can operate frequency from 0.01 to 2.0 GHz, having the low insertion loss and high isolation.
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PD5731T6M
PD5731T6M
12-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.
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PD5731T6M
PD5731T6M
12-pin
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HS350
Abstract: package T6R
Text: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
HS350
package T6R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2183T6C
PG2183T6C
16-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2183T6C
PG2183T6C
16-pin
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UPD5731
Abstract: HS350 12-PIN PD5731T6M uPD5731T6M
Text: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.
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PD5731T6M
PD5731T6M
12-pin
UPD5731
HS350
uPD5731T6M
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marking 26 spdt sot363
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2408TB 0.05 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2408TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch for 2.4 GHz wireless LAN, mobile phone and other L, S-band applications. This device operates with dual control switching voltages of 2.5 to 5.3 V. This device can operate at frequencies
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PG2408TB
PG2408TB
SC-88/SOT-363
marking 26 spdt sot363
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PG2409T6X
Abstract: PG2409T6X-E2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.
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PG2409T6X
PG2409T6X
PG2409T6X-E2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR Bluetooth TM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.
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PG2413T6M
11b/g
PG2413T6M
12-pin
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PG2415T6X-E2-A
Abstract: marking 6-PIN PLASTIC TSON HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies
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PG2415T6X
PG2415T6X
PG2415T6X-E2-A
marking 6-PIN PLASTIC TSON
HS350
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nec VARIABLE CAPACITANCE DIODE
Abstract: ND6361-3A ND6361-3D diode 3D
Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L
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L427414
ND6361-3A
ND6361-3D
WD6361
ND6361-3D.
b4S7414
ND6361
nec VARIABLE CAPACITANCE DIODE
ND6361-3D
diode 3D
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1SV80
Abstract: NEC DO-35 bectron
Text: NEC PIN DIODE ELECTRON DEVICE 1SV80 VHF/UHF RF ATTENUATIG AND SWITCHING SILICON PIN DIODE D ESCR IPTIO N A N D A P P LIC A T IO N S FE A TU R E S • Low cost. The 1SV80 silicon PIN diode, especially designed fo r V H F /U H F band sw itching, attenuating.
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1SV80
1SV80
DO-35
NEC DO-35
bectron
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TC-8008
Abstract: 2SJ355 xz43
Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)
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2SJ355
2sj355tip51-p^
iei-620)
TC-8008
2SJ355
xz43
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