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    PD5738T6N Search Results

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    PD5738T6N Price and Stock

    California Eastern Laboratories (CEL) UPD5738T6N-A

    IC RF SWITCH DPDT 2.5GHZ 6TSON
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    California Eastern Laboratories (CEL) UPD5738T6N-E2-A

    IC RF SWITCH DPDT 2.5GHZ 6TSON
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    Rochester Electronics LLC UPD5738T6N-E2-A

    IC RF SWITCH DPDT 2.5GHZ 6TSON
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    DigiKey UPD5738T6N-E2-A Bulk 433
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    Renesas Electronics Corporation UPD5738T6N-E2-A

    Diversity Switch, 10MHz Min, 2500MHz Max '
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    Rochester Electronics UPD5738T6N-E2-A 3,000 1
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    PD5738T6N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    Untitled

    Abstract: No abstract text available
    Text: CMOS INTEGRATED CIRCUIT PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The PD5738T6N is a CMOS MMIC DPDT Double Pole Double Throw switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation


    Original
    PDF PD5738T6N PD5738T6N PU10750EJ01V0DS IR260 HS350

    HS350

    Abstract: NEC RF Switch CMOS 5 pin ic ARB
    Text: DATA SHEET CEL CMOS INTEGRATED CIRCUIT ^PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION T h e ^P D 5 7 3 8 T 6 N is a C M O S M M IC D PD T D ouble Pole D ouble T hrow sw itch fo r m o b ile c o m m u n ic a tio n s , w irele ss co m m u n ica tio n s and o th e r RF sw itch ing applications.


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    PDF uPD5738T6N HS350 NEC RF Switch CMOS 5 pin ic ARB