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    NEC GA FET MARKING RF Search Results

    NEC GA FET MARKING RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    NEC GA FET MARKING RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC Ga FET marking L

    Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.


    Original     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    C10535E

    Abstract: NE76038 NE76038-T1 9971 gm NEC 2532 n 749
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    NE76184B

    Abstract: transistor GaAS marking 576 transistor NEC D 587 NEC Ga FET marking L NEC Ga FET marking A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    ps7200

    Abstract: SOP4 dip8 relay NEC Ga FET marking L NEC PS71 ps710 PS7221 solid state mini relay automotive of 4-pin DIP switch 9910 dip8
    Text: N E C E l ec t r o n i c s SOLI D STAT E R E L AY S — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include


    Original     		PDF Singl4-6720 CL-610A ps7200 SOP4 dip8 relay NEC Ga FET marking L NEC PS71 ps710 PS7221 solid state mini relay automotive of 4-pin DIP switch 9910 dip8

    3210S01

    Abstract: ne3210s01 NE3210S01-T1B NE3210S01-T1 NE3210
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 NE3210S01-T1B NE3210S01-T1 NE3210

    4614 fet

    Abstract: UM 9515 ne3210s01 NE4210S01 NE4210S01-T1 NE4210S01-T1B fet 4304
    Text: SUPER LOW NOISE HJ FET NE4210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm


    Original     		PDF NE4210S01 NE4210S01 4614 fet UM 9515 ne3210s01 NE4210S01-T1 NE4210S01-T1B fet 4304

    nec 4312

    Abstract: NE450184 NE450184C NEC Ga FET marking L N450184C-T1A n4501 NEC Ga FET marking A
    Text: PRELIMINARY DATA SHEET NEC's SUPER LOW NOISE NE450184C AMPLIFIER N-CHANNEL HJ-FET OUTLINE DIMENSIONS Units in mm • • SUPER LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 1.0 dB TYP., Ga = 10 dB TYP. @ f = 24 GHz GATE LENGTH: Lg < 0.2 m 1 L L 1.78 ± 0.2


    Original     		PDF NE450184C NE450184C nec 4312 NE450184 NEC Ga FET marking L N450184C-T1A n4501 NEC Ga FET marking A

    X band low noise

    Abstract: mesfet lnb transistor GaAS marking 576 NE722S01 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12
    Text: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz


    Original     		PDF NE722S01 NE722S01 X band low noise mesfet lnb transistor GaAS marking 576 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12

    NE722S01

    Abstract: nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf
    Text: NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 ± 0.2 • LOW NOISE/HIGH GAIN:


    Original     		PDF NE722S01 NE722S01 19e-12 92e-12 05e-12 2e-10 nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf

    150J10

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 1e-14 4e-12 12e-12 36e-12 014e-12 150J10

    transistor 8331

    Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:


    Original     		PDF NE34018 OT-343) NE34018 amplifie05 transistor 8331 LD SOT 423 transistor marking v64 ghz kf 982 NE34018-TI-64

    V64 SOT 23

    Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)


    Original     		PDF OT-343) NE34018 NE34018 V64 SOT 23 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018-A marking V64 sot343

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


    OCR Scan     		PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a

    HA 12058

    Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
    Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ­ ity. Its excellent low noise and high associated gain make


    OCR Scan     		PDF NE76038 NE76038 HA 12058 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf

    NEC Ga FET marking Rf

    Abstract: nec gaas fet marking
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.


    OCR Scan     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking

    IR 18779

    Abstract: NEC Ga FET marking L nec gaas fet marking
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AM PLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise fig u re & High a sso cia te d gain • G ate le n g th : Lg = 0.3 /¿m • G ate w id th : Wg NF = 1.6 dB TYP ., G a = 9.0 dB TYP. at f = 12 G H z


    OCR Scan     		PDF NE76084 E76084-T1 IR 18779 NEC Ga FET marking L nec gaas fet marking

    NEC Ga FET marking A

    Abstract: NE25139T1U74 NE25139U NE25139T1U71
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 Vi32S 90CIM NE251 NE25139T1 NE25139U74 24-Hour NEC Ga FET marking A NE25139T1U74 NE25139U NE25139T1U71

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE329S01 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y S U P E R L O W N O IS E F IG U R E : 0.35 dB Typ at f = 12 GHz H IG H A S S O C IA T E D G A IN : m T> < 3 1 3 .0 d B T y p a tf = 12 GHz G A T E L E N G TH : 0.2 jim


    OCR Scan     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour

    gs 069 0605

    Abstract: 4210M 8016 nec 5501 gm
    Text: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim


    OCR Scan     		PDF NE4210M01 NE4210M01 24-Hour gs 069 0605 4210M 8016 nec 5501 gm

    ET 8211

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour ET 8211

    NE3401B

    Abstract: marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD TJ, < Ö C '<D <3 TJ £


    OCR Scan     		PDF OT-343) NE34018 NE34018 thTI-63 NE34018-TI-64 9SD54 24-Hour NE3401B marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093