NDS8961 Search Results

NDS8961 Price and Stock

Filter by Manufacturer


FAIRCHILD NDS8961 NDS8961
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NDS8961		551		505	1 - 10 - 100 - 1000 $0.7431 10000 $0.7431	Buy Now
Fairchild Semiconductor Corporation NDS8961 3.1 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	NDS8961		2,950			1 $0.9789 10 $0.9789 100 $0.9789 1000 $0.4079 10000 $0.3589	Buy Now
Rochester Electronics	NDS8961		551		1	1 - 10 - 100 $0.5945 1000 $0.4934 10000 $0.4399	Buy Now
ComSIT USA	NDS8961		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NDS8961 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NDS8961		Fairchild Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDS8961		Fairchild Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDS8961		National Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDS8961		National Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
NDS8961		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
NDS8961		Fairchild Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Scan	PDF

NDS8961 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NDS8961 Contextual Info: FAIRCHILD MICDNDUCTQ R tm NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V. • High density cell design for extremely low RDS(0N).	OCR Scan	NDS8961 NDS8961 0D33347	PDF
NDS8961 Contextual Info: N February 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored	Original	NDS8961 NDS8961	PDF
NDS8961 Contextual Info: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDS8961 NDS8961	PDF
NDS8961 Contextual Info: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDS8961 NDS8961	PDF
NDS8961 Contextual Info: N September 1996 ADVANCE INFORMATION NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	Original	NDS8961 78oC/W 125oC/W 135oC/W NDS8961	PDF
Contextual Info: FAIRCHILD S E M IC G N D U C T O R NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 - N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell 3.1 A ,3 0 V .R DS ON = 0 . 1 0 @ V gs = 1 0 V	OCR Scan	NDS8961	PDF
Contextual Info: R A I R C H I I - D Jun e 1 9 9 7 M ICDNDUCTO R ^ NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel Features enhancement mode power field effect - 3.1 A, 30 V. Rds on = 0.1 £2 @ VGS = 10 V R dsion) = 0.15 £2 @ VGS = 4.5 V.	OCR Scan	NDS8961 NDS8961 193tQ	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8961 Contextual Info: June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	NDS8961 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8961	PDF
601lt Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P Contextual Info: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks \|	OCR Scan	S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P	PDF
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
HTGB Abstract: FDS35A FDS6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912 Contextual Info: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will	Original	fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS35A FDS6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912	PDF
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF