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onsemi NDS352AP MOSFET P-CH 30V 900MA SUPERSOT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDS352AP	Cut Tape	12,276		1	1 $0.53 10 $0.354 100 $0.53 1000 $0.1706 10000 $0.1706	Buy Now
	NDS352AP	Digi-Reel	12,276		1	1 $0.53 10 $0.354 100 $0.53 1000 $0.1706 10000 $0.1706	Buy Now
	NDS352AP	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.14827	Buy Now
Avnet Americas	NDS352AP	Reel		8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.11939	Buy Now
	NDS352AP	Reel		8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.11939	Buy Now
	NDS352AP	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.10683	Buy Now
Mouser Electronics	NDS352AP		9,024			1 $0.51 10 $0.354 100 $0.241 1000 $0.171 10000 $0.122	Buy Now
Verical	NDS352AP		6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1598	Buy Now
	NDS352AP		5,896		48	1 - 10 - 100 $0.2307 1000 $0.1695 10000 $0.1233	Buy Now
Arrow Electronics	NDS352AP		6,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.124	Buy Now
	NDS352AP	Cut Strips	5,896	8 Weeks	1	1 $0.491 10 $0.3425 100 $0.2307 1000 $0.1695 10000 $0.1233	Buy Now

Newark	NDS352AP	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.141	Buy Now
	NDS352AP	Cut Tape	136		1	1 $0.112 10 $0.112 100 $0.112 1000 $0.112 10000 $0.112	Buy Now
	NDS352AP	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.154	Buy Now
Onlinecomponents.com	NDS352AP		6,000			1 - 10 - 100 - 1000 - 10000 $0.1153	Buy Now
Bristol Electronics	NDS352AP		7,224			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	NDS352AP		259			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NDS352AP		4,332			1 $1 10 $1 100 $1 1000 $1 10000 $0.175	Buy Now
Rochester Electronics	NDS352AP		2,888		1	1 $0.136 10 $0.136 100 $0.1278 1000 $0.1156 10000 $0.1156	Buy Now
TME	NDS352AP		1,380		1	1 $0.466 10 $0.316 100 $0.214 1000 $0.164 10000 $0.164	Buy Now
Richardson RFPD	NDS352AP				6,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Avnet Asia	NDS352AP			8 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.12579	Buy Now
Avnet Silica	NDS352AP			9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NDS352AP		18,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	NDS352AP		6,000			1 - 10 - 100 - 1000 - 10000 $0.1229	Buy Now
New Advantage Corporation	NDS352AP		9,000		1	1 - 10 - 100 - 1000 - 10000 $0.206	Buy Now
onsemi NDS352P MOSFET P-CH 20V 850MA SUPERSOT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDS352P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NDS352P	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NDS352P MOSFET P-CH 20V 850MA SUPERSOT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDS352P	Bulk			987	1 - 10 - 100 - 1000 $0.3 10000 $0.3	Buy Now
MOSLEADER NDS352AP-NL-ML P-Channel -30V -0.9A SOT-23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDS352AP-NL-ML	Reel			200	1 - 10 - 100 - 1000 $0.03416 10000 $0.03122	Buy Now
Aptina Imaging NDS352AP Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NDS352AP		6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1244	Buy Now

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NDS352 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
NDS352AP	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDS352AP	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDS352AP	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
NDS352AP	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF
NDS352AP	National Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF
NDS352AP_D87Z	Fairchild Semiconductor	Transistor Mosfet P-CH 30V 0.9A 3 pin SOT-23 T/R	Original	PDF
NDS352P	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
NDS352P	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effec	Original	PDF
NDS352P	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
NDS352P	Fairchild Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF
NDS352P	National Semiconductor	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Scan	PDF

NDS352 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
R1402 Abstract: F501 sot23 ELCO6200 Text: 1 2 3 4 5 6 7 8 L26 6 1 5 4 GND H8AGND C262 0.1U 1206 VR_CHGNG# PME# THRM_CLK THRM_DATA H8AGND D23 SD[0.7] SD[0.7] +5VS +5V KBD_US/JP# H8_PWRON S SCI# Q501 NDS352P SOT23_FET RLS4148 MLL34B +5V R116 G 2 1 R523 10K 0603B ST/MA-3 CONN_DF13V_3 2 1 1 2 LED_CLK	Original	PDF	120Z/100M 0805C 0603B RLS4148 MLL34B DTC144WK OT23AN R1402 F501 sot23 ELCO6200
NDS352P Abstract: No abstract text available Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's	Original	PDF	NDS352P NDS352P
NDS352P Abstract: p-Channel Logic Level Enhancement Mode Text: N March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is	Original	PDF	NDS352P NDS352P p-Channel Logic Level Enhancement Mode
SOT-23N Abstract: c559 D1313 R17-1 RSMRST Text: 1 2 3 4 5 6 7 8 sent to d/d bd for charging comparator ckt when system is in powered off state VDD5 VDD5S Q9 A R127 470K 0603B RP511 7 7 7 7 5 6 7 8 A20M# IGNNE# INTR NMI 4 3 2 1 C_A20M# 2 C_IGNNE# 2 C_INTR 2 C_NMI 2 A NDS352P SOT23_FET D13 1 3 ADEN# 2 RP0X4	Original	PDF	RP511 0603B NDS352P BAV70LT1 OT23N DTC144WK OT23AN 0603B SOT-23N c559 D1313 R17-1 RSMRST
nds352ap g Abstract: NDS352AP Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is	Original	PDF	NDS352AP NDS352Ap nds352ap g
NDS352AP Abstract: No abstract text available Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDS352AP NDS352AP
BT501 Abstract: atq20 RSMRST RLS4148 6020 - MOTHER BD Text: 1 2 3 4 5 6 7 8 pull high at d/d bd R133 VDD3 2 VDD5S 1 RSMRST# K ADEN# 1 A 1 D13 2 R134 10K 0603B A R67 470K 0603B D21 RLS4148 MLL34B G R14 47K 0603 RLS4148 MLL34B C217 0.1U 0603B 2 GND 3 A JP_NET JP_NET15 2 4.7K 0603 pull low at PQ510 JL26 Q11 NDS352P S	Original	PDF	NDS352P 0603B NET15 PQ510 RLS4148 MLL34B DTC144WK OT23AN BT501 atq20 RSMRST 6020 - MOTHER BD
NDS352P Abstract: No abstract text available Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's	Original	PDF	NDS352P NDS352P
Untitled Abstract: No abstract text available Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDS352AP
BAV99-SOT23 Abstract: mitac mitac 6120 str 5V 3A rls4148 Text: 1 2 3 4 5 6 7 8 VMAIN F5 pull high at d/d bd 1 2 FUSE_1206 1A-1206 VDD5 R170 0603 VDD5SW C280 10U 1206 10V LP2951-02BM 2 1 R160 47K 0603 GND R181 100K 0603B R193 Q20 NDS352P S D VDD5S 100K 0603B PME# 18 ADEN# 18,22 18,22 3 STR# RLS4148 MLL34B JP_NET JP_NET15	Original	PDF	A-1206 LP2951-02BM NDS352P 0603B DTC144WK OT23AN PQ510 0603B SI2301DS RLS4148 BAV99-SOT23 mitac mitac 6120 str 5V 3A
NDS352AP Abstract: nds352 Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process	Original	PDF	NDS352AP NDS352Ap nds352
NDS352AP Abstract: No abstract text available Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDS352AP NDS352Ap
interfacing PIC18F4550 with CAN Abstract: PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3 Text: MCP2515 CAN Bus Monitor Demo Board User’s Guide 2008 Microchip Technology Inc. DS51757A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.	Original	PDF	MCP2515 DS51757A DS51757A-page interfacing PIC18F4550 with CAN PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3
Untitled Abstract: No abstract text available Text: ISL6256, ISL6256A Data Sheet June 1, 2007 Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers Features • ±0.5% Charge Voltage Accuracy -10°C to +100°C The ISL6256, ISL6256A is a highly integrated battery charger	Original	PDF	ISL6256, ISL6256A ISL6256A FN6499

ac power adapter for notebook schematic Abstract: 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8 ISL6255 Text: ISL6255EVAL1Z Evaluation Board Setup Procedure April 10, 2007 Application Note AN1296.0 General Description Features The ISL625xEVAL1B EV kit includes all the circuitry needed to demonstrate the capabilities of the ISL6255 Lithium-Ion battery-charger with integrated AC adapter current limit. The	Original	PDF	ISL6255EVAL1Z AN1296 ISL625xEVAL1B ISL6255 ISL6255, ISL6255A ac power adapter for notebook schematic 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8
ac power adapter for notebook schematic Abstract: 6256HRZ power adapter for notebook schematic top marking 91a sot23 DIODE smd marking R12 R20 marking R24 marking DATASHEET resistor smd 0805 ISL6256HRZ ISL6256AHRZ Text: ISL6256AEVAL1Z Evaluation Board Setup Procedure Application Note October 26, 2007 AN1363.0 Low Cost Multi-Chemistry Battery Charger Controller Features The ISL6256, ISL6256A is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries. High Efficiency is	Original	PDF	ISL6256AEVAL1Z AN1363 ISL6256, ISL6256A ac power adapter for notebook schematic 6256HRZ power adapter for notebook schematic top marking 91a sot23 DIODE smd marking R12 R20 marking R24 marking DATASHEET resistor smd 0805 ISL6256HRZ ISL6256AHRZ
Untitled Abstract: No abstract text available Text: March 1996 PAIRCHII-D M ICDNDUCTQ R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	NDS352P
bu 517 Abstract: NDS352P Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS	OCR Scan	PDF	NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P
n018 Abstract: NDS352P Text: March 1996 FAIRCHILD MICDNDUCTDR t m NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	NDS352P NDS352P n018
NDS352AP Abstract: supersot-3 Text: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,	OCR Scan	PDF	NDS352AP NDS352AP supersot-3
Untitled Abstract: No abstract text available Text: February 1997 M l G C IN D U C T O R NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	PDF	NDS352AP
Untitled Abstract: No abstract text available Text: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	NDS352P NDS352P
Untitled Abstract: No abstract text available Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	PDF	NDS352AP NDS352Ap

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NDS352 Datasheets (11)

NDS352 Datasheets Context Search

R1402

NDS352P

NDS352P

SOT-23N

nds352ap g

NDS352AP

BT501

NDS352P

Untitled

BAV99-SOT23

NDS352AP

NDS352AP

interfacing PIC18F4550 with CAN

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ac power adapter for notebook schematic

ac power adapter for notebook schematic

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bu 517

n018

NDS352AP

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