NDH8502P Search Results

NDH8502P

Contextual Info: December 1996 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDH8502P

Contextual Info: National S e m i c o n d u c t o r ’" May 1996 ADVANCE INFORMATION NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's

PCTI

Abstract: si8102 NDH8502P
Contextual Info: FAIRCHILD Decem ber 1996 iM IC G N D U C T O R 1 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

NDH8502P

Contextual Info: December 1996 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: F/MRCHII-D SEM ICONDUCTO R D ecem ber 1996 tm NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NDH8502P

Contextual Info: N September 1996 PRELIMINARY NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

Contextual Info: RAIRCHII-D SEM IC ONDUCTO R December 1996 tm NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDH8502P

Abstract: field effect transistors
Contextual Info: N May 1996 ADVANCE INFORMATION NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

NDT453N

Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
Contextual Info: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |

FDR4420A

Abstract: FDC637AN Complementary MOSFETs FDR8305N FDS8928 FDR6580 FDR6674A FDR6678A FDS8928A FDS8958A
Contextual Info: Discrete MOSFET SuperSOT-8 Products RDS ON Max (Ohms) @ VGS = VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) - 0.022 0.028 - 16.2 4.5 0.8 Config. Maximum Rating ID (A) PD (W) SuperSOT-8 N-Channel FDR8305N 20 Dual NDH831N 20 Single FDR6580 20

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V