NDB6051L
Abstract: NDP6051L 30D40 MJ48A
Text: N November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field
|
Original
|
NDP6051L
NDB6051L
NDB6051L
30D40
MJ48A
|
PDF
|
NDP6051L
Abstract: NDB6051L S1490 30d40
Text: November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field
|
Original
|
NDP6051L
NDB6051L
NDB6051L
S1490
30d40
|
PDF
|
NDP6051
Abstract: NDB6051
Text: May 1996 NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has
|
Original
|
NDP6051
NDB6051
NDB6051
|
PDF
|
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
|
Original
|
2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
|
PDF
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: November 1996 N NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density
|
OCR Scan
|
NDP6051L
NDB6051L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA IR C H ILD MICDNDUCTQ R May1996 tm NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel en hance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary, high cell
|
OCR Scan
|
May1996
NDP6051
NDB6051
|
PDF
|
Untitled
Abstract: No abstract text available
Text: t Q V NS e* mt ii co on na d\ u c t , o r . M ay 1996 ND P6051 / NDB6051 N-Channel Enhancement M ode Field Effect Transistor G e n e ral D e s c rip tio n F eatures T hese N -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld • 4 8 A , 5 0 V . RDS 0N = 0 .0 2 2 0
|
OCR Scan
|
P6051
NDB6051
|
PDF
|
m 861
Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
Text: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
|
OCR Scan
|
May1996
NDP6051/NDB6051
m 861
NDB6051
NDP6051
GCMOz
225si
T-50113
|
PDF
|
24A28
Abstract: NDB6051L NDP6051 NDP6051L
Text: Novem ber 1996 N NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density
|
OCR Scan
|
NDP6051L
NDB6051L
NDP6051
24A28
NDB6051L
|
PDF
|
