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    N6056 Price and Stock

    Microchip Technology Inc 1N6056

    TVS DIODE 41VWM 73.5VC DO13
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    Microchip Technology Inc 1N6056A

    TVS DIODE 43VWM 70.1VC DO13
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    Microchip Technology Inc 1N6056-TR

    TVS DIODE 41VWM 73.5VC DO13
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    Microchip Technology Inc JAN1N6056A

    TVS DIODE 43VWM 70.1VC DO13
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    Microchip Technology Inc 1N6056A-TR

    TVS DIODE 43VWM 70.1VC DO13
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    N6056 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


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    PDF 2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor

    2N6096

    Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE


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    PDF 2N6055 2N6056 N6056* 2N6055 2N6056 2N6096 2N6055 MOTOROLA N6056

    TYPE TO 092 Package pic

    Abstract: MN6062
    Text: Microísemi Corp. 1N 6036 thru 1 N 6 07 2A V T he <}<ode experts SANTA ANA, CA SCOTTSDALE, AZ F or m o r e in fo r m a tio n call: 6 0 2 941-6300 FEA TU RES • 1500 WATTS PEAK POWER DISSIPATION • AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V • 00-13 HERMETICALLY SEALED PACKAGE


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    PDF 1NB070A) MIL-S-19500/507 TYPE TO 092 Package pic MN6062

    n6055

    Abstract: 1N60 LL 34 N6045A N6037
    Text: N 6 0 3 6 - 1 N 6 0 7 2 A s e r i e s IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES •* Stand-off voltage range 6.8 - 200 Volts * Glass Passivated Junction - Excellent clamping capability


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    PDF -65tC 175tC 1000ns) DO-13 MIL-STD-202 n6055 1N60 LL 34 N6045A N6037

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    194304MHZ

    Abstract: MN6054 194304-MHz mn6056 N6054
    Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI Electrical Characteristics (Ta=25°C) Type No. Function Maximum Ratings (Ta=25°C) Symbol Item min. Condition J typ. | max. Unit CMOS Clock V do= —0.3—+4V Su p p ly Voltage V un Vss= 0V Topr= -3 0 ~+ 70 t


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    PDF 1801J 024Hz 12-Stage 194304MHz N6057 N6057 194304MHZ MN6054 194304-MHz mn6056 N6054

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt