24N50
Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
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21Node
21N50
24N50
26N50
O-204AE
24N50
21N50
26N50
N50 DIODE
IXFH26N50
.24n50
IXFH 24N50
IXFH24N50
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13N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
100ms
13N50
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13N50
Abstract: 1117 MC
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
13N50
1117 MC
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W £ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
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48N50
Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Text: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
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44N50
48N50
O-264
48N50
44N50
IXFK48N50
ixys ixfk 44n50
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13N50
Abstract: .15 k 250
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ
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O-247
O-204
O-204AA
13N50
13N50
.15 k 250
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STM TO 247 package inductance
Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Text: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM
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21N50
24N50
O-247
O-204
O-204
O-247
C2-40
STM TO 247 package inductance
SS24A
ixtm21n50
ixys ixth 21N50
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ixys ixth 21N50
Abstract: 21N50 24N50 ixth21n50
Text: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
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21N50
24N50
O-204
O-247
O-204
O-247
ixys ixth 21N50
21N50
24N50
ixth21n50
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gs 1117 ax
Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions
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IXFH/IXFM21
IXFH26N50
21N50
24N50
26N50
gs 1117 ax
1XFH
Diode SMD SJ 97
Diode SMD SJ 24
Diode SMD SJ 0B
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48N50
Abstract: W48A IXFN48N50 44N50
Text: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25
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44N50
48N50
48N50
W48A
IXFN48N50
44N50
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient
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IXFH13N50
IXFM13N50
O-247
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RFM10N50
Abstract: AN7254 AN7260 RFM10N45 TA17435
Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,
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RFM10
O204AA)
RFM10N45,
RFM10N50
AN7254
AN7260.
RFM10N50
AN7260
RFM10N45
TA17435
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BCT500
Abstract: W25VT YA8CLNT6 Y29-11 YA4CL YA25L-NT516 W25RT YA8CLn YA25LNT14
Text: DRAWING NO. NAVY CABLE CATALOG NUMBER ACCOMMODATES RG. SIZE^ 1 <1 #8 STR .146 Y A8CL-NT8 N23 #8 STR (.146) YA6CL-NT6 - YA4CL—NT10 N40 YA3CL—NT516 N50 Y A2CL-NT14 N60 YA2CL-NT10 N60 YA2CL-2NT10E2 N60 Y A2CL-2N T14 <jjí] N60 YA2CL—2NT14E2 N60 YA2CL—2NT14E1 < | ]
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SD201517
MY29--3
MY29--11
YA3CL--NT516
BCT500,
Y500CT
PAT600
SD201517
BCT500
W25VT
YA8CLNT6
Y29-11
YA4CL
YA25L-NT516
W25RT
YA8CLn
YA25LNT14
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IXTK33N50
Abstract: No abstract text available
Text: High Current MegaMOSTMFETs IXTK 33 N50 VDSS = 500 V I D25 = 33 A RDS on = 0.17 Ω Maximum Ratings TO-264 AA N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V
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O-264
struct38
IXTK33N50
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Untitled
Abstract: No abstract text available
Text: 5 0 —T S O P 2 —40 0 D F D im e n s io n s in M ilim e ters 11. 7 6 ± o .20 Ü n50 O o m ö X < s: m m n26 «25 0.205 to 050 un un r-. m o o 10.16 0.05MIN LTI CN 1.00 ±0 io 1.20 MAX 0.50 0.45-0.75 SAMSUNG ELECTRONICS CO.,LTD.
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400DF
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MFL-75
Abstract: 4835 mosfet mfl sot
Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1
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IXFN58N50
IXFN61N50
58N50
61N50
OT-227
l53432
MFL-75
4835 mosfet
mfl sot
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC
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SiHP16
SiHF16
SiHB16
SiHG16
2002/95/EC
SiHP16N50C-E3
SiHF16N50C-E3
SiHB16N50C-E3
VMN-PT0246-1010
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6Y50
Abstract: LN506OA LN506OK LN506YA LN506YK LNM476AA01 LNM476KA01 LNM876AA01 LNM876KA01
Text: Numeric Display 14.4 mm .6” Series d a e dp1 b dp2 1 2 3 4 5 8.0 ± 0.25 3.5 Min. *15.24 ± 0.38 10° Pin Assignment No. 1 Cathode e 10 9 8 7 6 c Amber Amber Orange Orange 0.5 4.5 Assignment 3.0 LN506YA •················· LNM476AA01 ··········
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LN506YA
LNM476AA01
LN506YK
6Y50
LN506OA
LN506OK
LN506YA
LN506YK
LNM476AA01
LNM476KA01
LNM876AA01
LNM876KA01
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TA17465
Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Text: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated
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RF4E20N50S
HUF75
337G3,
HUF753
TB334
RF4E20N50S
O-268
RF4E20N50ST
TA17465
RF4E20N50
power mosfet 500v 20a circuit
A1025
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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IXTN36N50
Abstract: No abstract text available
Text: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings
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IXTN36N45
IXTN36N50
D-68619;
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smm series
Abstract: 22A53
Text: SMM SERIES Engineering Bulletin Mar 07 SMM Series Ⅲ The SMM series is a high voltage, long life snap-in capacitor series that offers downsized versions of the SMH series. Compared to our SMH series, the SMM capacitors have a longer rated lifetime of 3,000 hours with the full rated ripple current applied and are also one case size smaller than
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PAL 007 B
Abstract: pal 007 PAL 007 c OmniVision CMOS Camera Module OmniVision Technologies CMOS Camera Module external sync OV5116 CMOS image sensor PAL omnivision PAL 007 A AEC Crystal Resonator
Text: OV5116P OV5116P SINGLE IC CMOS MONOCHROME CAMERA WITH PAL ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor External frame sync capability CCIR/PAL output 40mw on-chip power consumption Selectable mirror image External data acquisition support
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OV5116P
OV5116P
AVDD-733-3061
OV5116MD
OV5116
OV5116
PAL 007 B
pal 007
PAL 007 c
OmniVision CMOS Camera Module
OmniVision Technologies
CMOS Camera Module external sync
CMOS image sensor PAL omnivision
PAL 007 A
AEC Crystal Resonator
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SMM Series
Abstract: ESMM401VSN561MA40T smh series chemicon capacitor snap in PET sleeve with end disk R35-R40
Text: SMM SERIES Engineering Bulletin Mar 07 SMM Series Ⅲ The SMM series is a high voltage, long life snap-in capacitor series that offers downsized versions of the SMH series. Compared to our SMH series, the SMM capacitors have a longer rated lifetime of 3,000 hours with the full rated ripple current applied and are also one case size smaller than
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