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    IXFM13 Search Results

    IXFM13 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFM13N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFM13N50 IXYS HiperFET Power MOSFETS Scan PDF
    IXFM13N50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXFM13N65 IXYS HiperFET Power MOSFETS Scan PDF
    IXFM13N65 IXYS HiPerFET Power MOSFET Scan PDF
    IXFM13N80 IXYS 800V HiPerFET power MOSFET Original PDF
    IXFM13N80 IXYS N-Channel Enhancement Mode HiPerFET Power MOSFET Original PDF
    IXFM13N80 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXFM13N90 Unknown HiPerFET Power MOSFETs Original PDF
    IXFM13N90 IXYS HIPERFET Power MOSFTETs Scan PDF
    IXFM13N90 IXYS HiperFET Power MOSFETS Scan PDF

    IXFM13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFM13N80

    Abstract: SHD239610
    Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 13 8 300 0.8 @ 6.5 0.27 IXFM13N80


    Original     		PDF IXFM13N80 SHD239610 IXFM13N80 SHD239610

    IXFM13N80

    Abstract: SHD225610
    Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 13 8 200 0.8 @ 6.5 0.32 IXFM13N80


    Original     		PDF IXFM13N80 O-254 SHD225610 IXFM13N80 SHD225610

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    IXFM50N20

    Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
    Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60


    Original     		PDF SHD218413 SHD2181 SHD2182 SHD2183 SHD2184 SHD2185 SHD2186 SHD2187 SHD2188 SHD218413A IXFM50N20 IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient


    OCR Scan     		PDF IXFH13N50 IXFM13N50 O-247

    11n80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A


    OCR Scan     		PDF IXFH/IXFM13 11N80 13N80 13N80 O-247

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


    OCR Scan     		PDF 0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


    OCR Scan     		PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


    OCR Scan     		PDF 4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80

    TL 650 ht

    Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
    Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching


    OCR Scan     		PDF 4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50

    *2393n

    Abstract: D2199 IRF9140 2184b d2186 2188a d2188
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC


    OCR Scan     		PDF SHD2261 SHD2262 SHD2263 SHD2264 SHD2265 SHD2266 SHD2268 IRFY044 *2393n D2199 IRF9140 2184b d2186 2188a d2188