24N50
Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
21Node
21N50
24N50
26N50
O-204AE
24N50
21N50
26N50
N50 DIODE
IXFH26N50
.24n50
IXFH 24N50
IXFH24N50
|
PDF
|
13N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
|
Original
|
O-247
O-204
100ms
13N50
|
PDF
|
13N50
Abstract: 1117 MC
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
|
Original
|
O-247
O-204
13N50
1117 MC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W £ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
|
Original
|
O-247
O-204
|
PDF
|
48N50
Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Text: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C
|
Original
|
44N50
48N50
O-264
48N50
44N50
IXFK48N50
ixys ixfk 44n50
|
PDF
|
13N50
Abstract: .15 k 250
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
O-247
O-204
O-204AA
13N50
13N50
.15 k 250
|
PDF
|
STM TO 247 package inductance
Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Text: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM
|
OCR Scan
|
21N50
24N50
O-247
O-204
O-204
O-247
C2-40
STM TO 247 package inductance
SS24A
ixtm21n50
ixys ixth 21N50
|
PDF
|
ixys ixth 21N50
Abstract: 21N50 24N50 ixth21n50
Text: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
21N50
24N50
O-204
O-247
O-204
O-247
ixys ixth 21N50
21N50
24N50
ixth21n50
|
PDF
|
48N50
Abstract: W48A IXFN48N50 44N50
Text: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25
|
Original
|
44N50
48N50
48N50
W48A
IXFN48N50
44N50
|
PDF
|
gs 1117 ax
Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions
|
OCR Scan
|
IXFH/IXFM21
IXFH26N50
21N50
24N50
26N50
gs 1117 ax
1XFH
Diode SMD SJ 97
Diode SMD SJ 24
Diode SMD SJ 0B
|
PDF
|
RFM10N50
Abstract: AN7254 AN7260 RFM10N45 TA17435
Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,
|
Original
|
RFM10
O204AA)
RFM10N45,
RFM10N50
AN7254
AN7260.
RFM10N50
AN7260
RFM10N45
TA17435
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient
|
OCR Scan
|
IXFH13N50
IXFM13N50
O-247
|
PDF
|
ste36n50a
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON ULKgraMOeS S T E 3 6 N50 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE36N 50A dss 500 V RDS on Id < 0 .1 4 ß 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . VERY LARGE SOA - LARGE PEAK POWER
|
OCR Scan
|
STE36N
E81743)
ste36n50a
|
PDF
|
STE36N50
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON ULKgraMOeS S TE 3 6 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE36N50 V dss 500 V RDS on Id < 0 .1 4 Q. 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER
|
OCR Scan
|
STE36N50
IRFP450
E81743)
STE36N50
|
PDF
|
|
|
GC550
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON ULKgraMOeS S T E 26 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE26N50 V dss 500 V R D S o n Id < 0 .2 Q. 26 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER
|
OCR Scan
|
STE26N50
IRFP450
E81743)
GC550
|
PDF
|
IXFN61N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 61 N50 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Objective Technical Specification * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
OT-227
IXFN61N50
|
PDF
|
47n50
Abstract: STE47N50 diode sg 47
Text: £ j ï SGS-THOMSON ULKgraMOeS S TE 4 7 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE47N50 V dss 500 V R D S o n Id < 0 .1 i2 47 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER
|
OCR Scan
|
STE47N50
IRFP450
E81743)
47n50
STE47N50
diode sg 47
|
PDF
|
MFL-75
Abstract: 4835 mosfet mfl sot
Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1
|
OCR Scan
|
IXFN58N50
IXFN61N50
58N50
61N50
OT-227
l53432
MFL-75
4835 mosfet
mfl sot
|
PDF
|
IXFH30N50
Abstract: IXFH32N50
Text: P R E L IM IN A R Y D A T A S H E E T V DSS HiPerFET Power MOSFETs IXFH30N50 IXFH32 N50 ^D25 p DS on 500 V 30 A 0.16 Q 500 V 32 A 0.15 a trr < 250 ns N-Channel Enhancement Mode High dv/dt, Low HDMOS™ Family Symbol Test Conditions V DSS Tj V DCR Tj = 25°C to
|
OCR Scan
|
IXFH30N50
IXFH32
30N50
32N50
00030clÃ
IXFH32N50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
|
Original
|
KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
|
PDF
|
FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
|
Original
|
FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
|
PDF
|
n13 sot 65
Abstract: FDT461N 29e8 RS80 marking 461 m067
Text: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode
|
Original
|
FDT461N
OT-223
110oC/W)
n13 sot 65
FDT461N
29e8
RS80
marking 461
m067
|
PDF
|
m079
Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Text: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse
|
Original
|
HUFA75433S3S
m079
HUFA75433S3S
HUFA75433S3ST
Marking N8
KP26
|
PDF
|
65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Text: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
|
OCR Scan
|
ITF86116SQT
ITF86116SQT
65e9
TB370
AN7254
AN7260
|
PDF
|
