2092A
Abstract: No abstract text available
Text: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage
|
OCR Scan
|
42893TH/N1292MH
2SJ191
2092A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5
|
Original
|
EN3509A
2SJ187
2SJ187]
25max
|
PDF
|
2SJ191
Abstract: No abstract text available
Text: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
|
OCR Scan
|
2SJ191
10/js,
2SJ191
|
PDF
|
2SJ187
Abstract: 3509-1 35094 2062a 35092
Text: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5
|
Original
|
EN3509A
2SJ187
2SJ187]
25max
2SJ187
3509-1
35094
2062a
35092
|
PDF
|
2SJ272
Abstract: ITR00288 ITR00289 ITR00290 ITR00291
Text: 注文コード No.N 4 2 3 8 2SJ272 No. 4 2 3 8 61599 新 2SJ272 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。
|
Original
|
2SJ272
--10V
--50V
ITR00294
ITR00295
ITR00296
ITR00297
2SJ272
ITR00288
ITR00289
ITR00290
ITR00291
|
PDF
|
2SJ190
Abstract: No abstract text available
Text: Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ190] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3
|
Original
|
EN3763
2SJ190
2SJ190]
25max
2SJ190
|
PDF
|
ITR00308
Abstract: 2SJ274 ITR00309 ITR00310 ITR00311
Text: 注文コード No.N 4 2 3 9 2SJ274 No. 4 2 3 9 52099 新 2SJ274 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・マイカレスパッケージで取り付け作業性が良い。
|
Original
|
2SJ274
--10V
--50V
ITR00315
ITR00314
ITR00316
ITR00317
ITR00308
2SJ274
ITR00309
ITR00310
ITR00311
|
PDF
|
2SJ266
Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
Text: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
|
Original
|
2SJ266
IT00264
IT00265
ITR00262
IT00266
IT00267
2SJ266
ITR00258
ITR00259
ITR00260
ITR00261
ITR00262
IT00265
|
PDF
|
2SJ263
Abstract: ITR00228 ITR00229 ITR00230 ITR00231
Text: 注文コード No.N 4 2 3 4 2SJ263 三洋半導体ニューズ No. 4 2 3 4 52099 新 2SJ263 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
|
Original
|
2SJ263
--30V
--10V
ITR00234
ITR00235
ITR00236
ITR00237
2SJ263
ITR00228
ITR00229
ITR00230
ITR00231
|
PDF
|
2SJ187
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN3509A 2 SJ 187 NO.3509A SAXYO P-Channel MOS Silicon FET i Very High-Speed Switching Applications F e a tu re s • Low ON resistance • Very high-speed switching • Low-voltage drive A bsolute M axim um R atings a tT a = 25°C
|
OCR Scan
|
EN3509A
250mm2X
2SJ187
|
PDF
|
2SJ190
Abstract: 2SJ19
Text: 2SJ190 4fr 2062 L D L o w D riv e S e rie s V o ss” 6 0 V P Channel P o w er M O S F E T •£■3763 F e a tu re s • Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a t Ta = 25°C Drain to Source Voltage
|
OCR Scan
|
2SJ190
--60V,
--10V,
500mA
500mA,
----20V
N1292MH
A8-7541
2SJ190
2SJ19
|
PDF
|
2SJ187
Abstract: No abstract text available
Text: 2SJ187 LD L o w D r iv e S e r ie s 2062 V dss = 30V P Channel Power M OSFET F eatu res •Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a tT a = 25°C Drain to Source Voltage V d ss Gate to Source Voltage
|
OCR Scan
|
2SJ187
--10V,
-500m
500mA,
10/ks,
N1292MH
X-6951
2SJ187
|
PDF
|
bx 18A
Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
|
Original
|
2SJ268
IT00284
--30V
--10V
ITR00282
IT00285
IT00286
IT00287
bx 18A
2SJ268
ITR00278
ITR00279
ITR00280
ITR00281
ITR00282
|
PDF
|
ITR00341
Abstract: ITR00342 2SJ277 ITR00338 ITR00339 ITR00340 2090a
Text: 注文コード No.N 4 2 4 1 2SJ277 No. 4 2 4 1 三洋半導体ニューズ 61499 新 2SJ277 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
|
Original
|
2SJ277
ITR00343
--50V
--10V
ITR00342
IT00345
IT00346
IT00347
ITR00341
ITR00342
2SJ277
ITR00338
ITR00339
ITR00340
2090a
|
PDF
|
|
|
2SJ188
Abstract: No abstract text available
Text: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ188] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
|
Original
|
EN3761A
2SJ188
2083B
2SJ188]
2092B
2SJ188
|
PDF
|
2SJ191
Abstract: No abstract text available
Text: Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ191] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
|
Original
|
EN3764A
2SJ191
2083B
2SJ191]
2092B
2SJ191
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage
|
OCR Scan
|
2SJ189
--10V,
42893TH/N1292MH
|
PDF
|
2SJ190
Abstract: No abstract text available
Text: Ordering number :EN 3763 2 SJ 19 0 No.3763 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance •Very high-speed switching • Low-voltage drive A b so lu te M axim um R atin g s a tT a = 25°C Drain to Source Voltage
|
OCR Scan
|
250mmzX
2SJ190
|
PDF
|
2SJ188
Abstract: 2092A
Text: 2SJ188 2083A LD L o w D rive Series V Dss = 3 0 V 2092A P Channel Power MOSFET 3761A F e a tu re s - Low ON resistance • Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
|
OCR Scan
|
2SJ188
376IA
10/is,
100/iA,
13A21
2SJ188
2092A
|
PDF
|
2SJ256
Abstract: ITR00188 ITR00189 ITR00190
Text: 注文コード No.N 4 2 3 2 2SJ256 三洋半導体ニューズ No. 4 2 3 2 52099 新 2SJ256 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。
|
Original
|
2SJ256
--15V
ITR00194
--10V
ITR00195
ITR00196
ITR00197
2SJ256
ITR00188
ITR00189
ITR00190
|
PDF
|
ITR00362
Abstract: ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361
Text: 注文コード No.N 4 2 2 1 A 2SJ285 No. 4 2 2 1 A 61599 半導体ニューズ No.4221 とさしかえてください。 2SJ285 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。
|
Original
|
2SJ285
150mA
150mA,
--10V
ITR00362
ITR00363
--30V
ITR00362
ITR00363
2SJ285
ITR00358
ITR00359
ITR00360
ITR00361
|
PDF
|
2SJ189
Abstract: No abstract text available
Text: Ordering number:EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ189] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
|
Original
|
EN3762A
2SJ189
2083B
2SJ189]
2092B
2SJ189
|
PDF
|
2SJ188
Abstract: No abstract text available
Text: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ188] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
|
Original
|
EN3761A
2SJ188
2083B
2SJ188]
2092B
2SJ188
|
PDF
|
2SJ190
Abstract: No abstract text available
Text: Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ190] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3
|
Original
|
EN3763
2SJ190
2SJ190]
25max
2SJ190
|
PDF
|