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    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ187] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original     		PDF EN3509A 2SJ187 2SJ187] 25max

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain


    Original     		PDF EN5300A 2SK2316 062A-PCP 2SK2316] 250mm2Ã

    dg transistor smd

    Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage


    Original     		PDF 2SD1624 250mm2X0 dg transistor smd 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624

    smd marking DA

    Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1618 250mm2X0 500mA 100mA smd marking DA marking da 2SD1618 DA SMD SMD BR 08 DA marking

    2SD1621

    Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,


    Original     		PDF 2SD1621 2SD1621 SMD TRANSISTOR MARKING Dd smd transistor 560

    Untitled

    Abstract: No abstract text available
    Text: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


    OCR Scan     		PDF RN5001 RN5001) RN6001

    IC JRC circuits

    Abstract: No abstract text available
    Text: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max


    OCR Scan     		PDF 2SC4705 100mA, 100mA 7190MH IC JRC circuits

    ic power 22E

    Abstract: power 22E IC 12E MARKING
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC3607 IS21e CL4-a05 ic power 22E power 22E IC 12E MARKING

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		PDF RN5003 RN6003 250mm2

    Untitled

    Abstract: No abstract text available
    Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density


    OCR Scan     		PDF FP205 FP205 2SA1416 2SC3646,

    Untitled

    Abstract: No abstract text available
    Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage


    OCR Scan     		PDF 2SK1724 10//S, 250mm2X 31893TH A8-7831

    2097a

    Abstract: No abstract text available
    Text: O rdering number :E N 4 5 3 6 SA\YO j No.4536 ¡j_ _ FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications F eatu res • Composite type with 2 transistors NPN contained in one package,facilitating


    OCR Scan     		PDF FP209 FP209 2SD1621 250mm2X0 250mm2X 53094TH BX-0215 20lBl 20lB2= 2097a

    AX8896

    Abstract: No abstract text available
    Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		PDF 2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


    OCR Scan     		PDF RN5002 RN6002 --10V,

    2088a

    Abstract: No abstract text available
    Text: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,


    OCR Scan     		PDF FP102 FP102 2SB1396 SB07-03C, 700mA 100mA 250mm2X0 20Ib2 2088a

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 4-Q05 50BASE--

    8897

    Abstract: No abstract text available
    Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


    OCR Scan     		PDF 2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter


    OCR Scan     		PDF 2SB1325/2SD1999 2SB1325 250mm2x 150mA 7149MO

    marking 210

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: E N 4 5 3 7 F eatures •Composite type with 2 transistors PNP contained in one package,facilitating high-density mounting. • The FP210 is formed with 2 chips.being equivalent to the 2SB1123,placed in one package. A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF FP210 2SB1123 250mm2X marking 210

    marking DK

    Abstract: 2SD1628
    Text: Ordering number:EN1781A _ 2SD1628 N0.1781A NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.


    OCR Scan     		PDF i78iA 2SD1628 250mm^ marking DK

    2SA1969

    Abstract: No abstract text available
    Text: Ordering number:EN5O90 N o.5098 SA IVO i 2 S A 1 9 6 9 II PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier, MediumCurrent Ultrahigh-Speed Switching Applications F eatu res • HighÍT{ÍT = l-7G H ztyp . • Large current capacity Ic = —400mA).


    OCR Scan     		PDF EN5098 2SA1969 400mA) 250mm2

    2SA1204

    Abstract: 2SC2884 SA12
    Text: T O S H IB A 2SA 1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 12 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : 1i f = 100~320 e Suitable for Output Stage of 1 W atts Amplifier P q = 1~2W (Mounted on Ceram ic Substrate)


    OCR Scan     		PDF 2SA1204 2SC2884 250mm2X0 SA12

    2SA1202

    Abstract: 2SC2882
    Text: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)


    OCR Scan     		PDF 2SA1202 2SC2882

    2SD1620

    Abstract: No abstract text available
    Text: Ordering num ber:ENÌ719B N0.1719B _ 2SD1620 NPN Epitaxial Planar Silicon Transistor sa u y o i 1.5V, 3V Strobe Applications F e a tu re s •Less power dissipation because of low VcE sat » permitting more flashes of light to be emitted. ■Large current capacity and highly resistant to breakdown.


    OCR Scan     		PDF 1719B l719B 2SD1620