2SJ19 Search Results

2SJ195

Contextual Info: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2SJ192

Abstract: EN3765
Contextual Info: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

J196

Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Contextual Info: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o

2SJ191

Contextual Info: 2SJ191 2083A LD L o w D rive Series V Dss = 6 0 V 2092A P Channel Power MOSFET 3764A Features • Low ON resistance •Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

2SJ190

Contextual Info: Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ190] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3

87541

Abstract: 2SJ190 2062a ITR00029 ITR00030 ITR00032 ITR00033 ITR01031
Contextual Info: 注文コード No.N 3 7 6 3 2SJ190 No. 3 7 6 3 51899 新 2SJ190 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

Contextual Info: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 7 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO N S U n it : m m device w h ich can be driven d ire c tly b y th e o u tp u t o f ICs having a 5

2092A

Contextual Info: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2SJ193

Abstract: 41293TH 37662
Contextual Info: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C

2SJ26

Contextual Info: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6

2SJ190

Abstract: 2SJ19
Contextual Info: 2SJ190 4fr 2062 L D L o w D riv e S e rie s V o ss” 6 0 V P Channel P o w er M O S F E T •£■3763 F e a tu re s • Low ON resistance ■Very high-speed switching ■Low-voltage drive A bsolute M axim um R atin g s a t Ta = 25°C Drain to Source Voltage

Contextual Info: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage

diode sy 710

Abstract: sy 710 diode 2SJ192
Contextual Info: 2SJ192 2083A 2092A LD L o w D riv e S e rie s V qSs = 6 0 V P Channel Power MOSFET 3765 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage

2SJ194

Abstract: ITR00067 ITR00068
Contextual Info: 注文コード No.N 3 7 6 7 A 2SJ194 No. 3 7 6 7 A 51899 半導体ニューズ No.3767 とさしかえてください。 2SJ194 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

2SJ191

Abstract: ITR00039 ITR00040
Contextual Info: 注文コード No.N 3 7 6 4 A 2SJ191 No. 3 7 6 4 A 51899 半導体ニューズ No.3764 とさしかえてください。 2SJ191 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

2SJ195

Abstract: EN3768 37684
Contextual Info: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ192

Contextual Info: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ191

Contextual Info: Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ191] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

2SJ199

Abstract: 2SK1485
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S J 1 9 9 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 1.5 ± 0 . 1 3— The 2SJ199, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5

MARKING PB SmD TRANSISTOR SOT-89

Abstract: marking PB 2SJ197 transistor smd .PB PB SmD TRANSISTOR SOT-89
Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A

2SJ270

Abstract: 2SJ26
Contextual Info: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0

2SK1482

Abstract: 2sj196 SS-220 10v
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ196 P-CHANNEL MOS FET FOR SWITCHING OUTLINE DIMENSIONS Unit : mm

EN3767

Abstract: 2SJ194
Contextual Info: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage