N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Search Results

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BF511 Abstract: Bf513 Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513	PDF
BF510 Abstract: BF511 BF512 BF513 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513	PDF
BF545A_BF545B_BF545C Abstract: BF545B Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF545A; BF545B; BF545C BF545A) BF545A BF545A_BF545B_BF545C BF545B	PDF
Untitled Abstract: No abstract text available Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF556A; BF556B; BF556C BF556A	PDF
Untitled Abstract: No abstract text available Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF545A; BF545B; BF545C BF545A) BF545A	PDF
BF556A_BF556B_BF556C Abstract: No abstract text available Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF556A; BF556B; BF556C BF556A BF556A_BF556B_BF556C	PDF
pmbfj310 Abstract: No abstract text available Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION	Original	PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310	PDF
BF545A Abstract: BF545B BF545C Text: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	BF545A; BF545B; BF545C MSC895 BF545A) BF545A BF545B BF545C	PDF
mrc145 Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149 Text: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	BF556A; BF556B; BF556C MSC895 mrc145 MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149	PDF
J112 Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na" Text: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA	OCR Scan	T0-92 350mW VDS40 80x69477 3-/T10371 J112 Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"	PDF
J113 Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na" Text: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage	OCR Scan	350mW vds40 00x69477 J113 J112 Field Effect Transistors j112 ltd J111 "igss 1 na"	PDF
MMT3823 Abstract: micro-T Package Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is	OCR Scan	MMT3823 100-MHz MMT3823 micro-T Package	PDF
MPF4391 Abstract: MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391 Text: MPF4391, MPF4392, MPF4393 SILICON SILICON N-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (T yp e A ) Junction F ield -E ffect Transistors designed for chopper and high-speed switching applications.	OCR Scan	MPF4391, MPF4392, MPF4393 MPF4391 MPF4392 MPF4391 MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391	PDF
2N3822 Abstract: 2N3822 equivalent J2N3822 Text: 2N3822 A_ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency am plifier applications. The 2 N 3 8 2 2 features low gate	OCR Scan	2N3822 2N3822 100ms 2N3822 equivalent J2N3822	PDF

Untitled Abstract: No abstract text available Text: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE \| BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source	OCR Scan	bbS3T31 BFR101A BFR101B	PDF
J111 Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112 Text: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.	OCR Scan	750fiforJ111 1550n 3150i2forJ113 M89-1044/RC J111 J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112	PDF
Untitled Abstract: No abstract text available Text: BF410A to D _ J\ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.	OCR Scan	BF410A BF410 BF410B; BF410C BF410D;	PDF
yn 1018 Abstract: MPF820 RS-50S Scans-00100834 Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.	OCR Scan	MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834	PDF
u175 Abstract: MPF112 Text: MPF 112 SILICON SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Depletion Mode (Type A ) device designed fo r V H F am plifier and mixer applications. • Low Cross-Modulation Distortion • Low Transfer Capacitance - C rss = 3.0 pF (Typ) @ V q $ = 10 Vdc	OCR Scan	MPF112 u175 MPF112	PDF
PN4393 Abstract: PN4391 PN4392 Text: PN4391 PN4392 PN4393 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical n-channel junction field-effect transistors in plastic TO-92 envelopes with the gate connected to the case. The transistors are intended for use in analog switches, commutators and	OCR Scan	PN4391 PN4392 PN4393 PN4393	PDF
Untitled Abstract: No abstract text available Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.	OCR Scan	BC264A tjtiS3T31 0D3S715	PDF
BF410 Abstract: BF410C Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field- effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. BF41OA to D	OCR Scan	BF410 BF41OA BF410A BF410C BF410D;	PDF
BF512 Abstract: BF510 marking code 513 Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and	OCR Scan	BF510) BF511) BF512) BF513) BF510 BF511 BF512 BF513 BF510 MAM33S BF512 marking code 513	PDF

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Search Results

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Result Highlights (5)

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Datasheets Context Search

BF511

BF510

BF545A_BF545B_BF545C

Untitled

Untitled

BF556A_BF556B_BF556C

pmbfj310

BF545A

mrc145

J112

J113

MMT3823

MPF4391

2N3822

Untitled

Untitled

J111

Untitled

yn 1018

u175

PN4393

Untitled

BF410

BF512