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    BF556B; Search Results

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    BF556B; Price and Stock

    NXP Semiconductors BF556B,215

    RF MOSFET JFET 30V SOT23
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    DigiKey BF556B,215 Reel 3,000
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    NXP Semiconductors BF556B-T

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;
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    Vyrian BF556B-T 193
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    NXP Semiconductors BF556B-TAPE-7

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;
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    Vyrian BF556B-TAPE-7 143
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    NXP Semiconductors BF556B-TAPE-13

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V;
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    Vyrian BF556B-TAPE-13 82
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    NXP Semiconductors BF556B

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Finish: TIN; Field Effect Transistor Technology: JUNCTION;
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    Vyrian BF556B 62
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    BF556B; Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF556B NXP Semiconductors BF556B - N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556B Philips Semiconductors N-Channel Silicon Junction Field-Effect Transistor Original PDF
    BF556B Philips Semiconductors N-Channel Field Effect Transistor Original PDF
    BF556B Philips Semiconductors N-Channel Silicon Junction Field Effect Transistor Scan PDF
    BF556B,215 NXP Semiconductors BF556 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal Original PDF
    BF556B,215 NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BF556BT/R NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556B T/R Philips Semiconductors FET Transistor, N Channel, ID 0.013A, Tape and Reel Original PDF
    BF556BTR Philips Semiconductors N-channel silicon junction field-effect transistor Original PDF