N 1210 TRANSISTOR Search Results

Contextual Info: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ

Contextual Info: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L

104LHS31

Abstract: D 799 104PW191 NL8060BC26-19Y display nec 20*2
Contextual Info: TFT COLOR LCD MODULE NL8060BC26-19Y 26cm 10.4 Type SVGA PRELIMINARY DATA SHEET (2nd edition) Document Number: DOD-M- 1210 (2nd edition) Published date: October 2002 N CP(N) ã NEC Corporation 2002 All rights reserved. NL8060BC26-19Y INTRODUCTION No part of this document shall be copied in any form or by any means without the prior written consent

V12MLA0805L

Abstract: V14MLA0603 V14MLA0805 V9MLA0603 V9MLA0805L
Contextual Info: ML Series S E M I C O N D U C T O R Multilayer Surface Mount Transient Voltage Surge Suppressors February 1998 Features Description • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer

varistor 222

Abstract: harris varistor V14MLA0603 V14MLA0805 V14MLA0805L V14MLA1206 V9MLA0603 V14MLA0805 T
Contextual Info: ML Series S E M I C O N D U C T O R Multilayer Surface Mount Transient Voltage Surge Suppressors April 1997 Features Description • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer

Contextual Info: >ki>jxiyki 19-1210; Rev 0 :3 /9 7 +3.3 V, 6 2 2 M b p s , S DH/ SONET 1:8 D e s e r i a l i z e r w i t h TTL O u t p u t s Features The M A X 3 68 0 d e s e ria liz e r is id e a l fo r c o n v e rtin g 6 22 M b ps serial d a ta to 8 -b it-w id e , 7 7M bp s parallel

TPC8401

Contextual Info: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •

Contextual Info: T O SH IB A TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8

taking photo

Abstract: led 5mm 700nm
Contextual Info: T O SH IB A TLP832 TOSHIBA PHOTO INTERRUPTER INFRARED LED + PHOTO TRANSISTOR TLP832 HOME ELECTRONICS EQUIPMENT SUCH AS VCRS AND CD PLAYERS OA EQUIPMENT SUCH AS COPIERS, PRINTERS, AND FACSIMILES AUTOMATIC SERVICING EQUIPMENT SUCH AS COMMODITY AND TICKET VENDING MACHINES

Tlp832

Contextual Info: TOSHIBA TLP832 TOSHIBA PHOTO INTERRUPTER INFRARED LED + PHOTO TRANSISTOR TLP832 HOME ELECTRONICS EQUIPMENT SUCH AS VCRS AND CD PLAYERS OA EQUIPMENT SUCH AS COPIERS, PRINTERS, AND FACSIMILES AUTOMATIC SERVICING EQUIPMENT SUCH AS COMMODITY AND TICKET VENDING MACHINES

2SK192A

Abstract: 2sk192
Contextual Info: 2SK192A TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K1 9 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS 4.2MAX. • High Power Gain : Gpg = 24dB Typ. (f = 100 MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f = 100 MHz)

Contextual Info: TO SH IBA 2SA1245 TOSHIBA TRANSISTOR 2 S SILICON PNP EPITAXIAL PLANAR TYPE A 1 2 4 5 HIGH FREQUENCY AMPLIFIER AND SWITCHING APPLICATIONS U n it in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING

Contextual Info: TOSHIBA TPS604 TOSHIBA PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS604 PHOTO TRANSISTOR FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • TO-18 m etal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.

2SK210

Contextual Info: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure

2SK302

Contextual Info: TO SH IBA 2SK302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK302 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS • • • • Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Gpg = 28dB (Typ.) 5-15V Low Reverse Transfer Capacitance Low Noise Figure

TLP91

Abstract: TLP910
Contextual Info: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS

TPS604 photo transistor

Abstract: Toshiba phototransistor TPS601A
Contextual Info: T O SH IB A TPS604 TPS604 TOSHIBA PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR PHOTO TRANSISTOR FOR PHOTO SENSOR PHOTOELECTRIC COUNTER VARIOU5 KINDS OF READER5 POSITION DETECTION • • • TO-18 metal package High sensitivity. Sharp directivity, Incident light can be effectively used,

MT6P06E

Abstract: MT3S06S MT3S06T
Contextual Info: TO SH IBA MT6P06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P06E Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B- Q1/Q2 : SSM (TESM)

2SC5096

Abstract: HN2C12FT
Contextual Info: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6

Contextual Info: TOSHIBA SSM3K03FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K03FE HIGH SPEED SWITCH APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 • 2.5 V Gate Drive • High Input Impedance • Low Gate Threshold Voltage •

MT3S03AS

Abstract: MT3S03AT MT6C03AE
Contextual Info: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)

2SK241

Contextual Info: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain

2SC5086

Abstract: HN2C10FT
Contextual Info: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 0 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6

MT3S06S

Abstract: MT3S06T MT6C06E
Contextual Info: TO SH IBA MT6C06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C06E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are