MT3S03AT Search Results

MT3S03AT

Abstract: 014E 200E 800E
Contextual Info: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0

transistor 14315

Abstract: 14315
Contextual Info: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll

of ic 8038

Abstract: MT3S03AT IC 7486 ic 7815
Contextual Info: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB typ. (at f = 2 GHz) • High gain: gain = 8dB (typ.) (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

specifications of ic 8038

Abstract: working of ic 8038 for semiconductor IC 7106
Contextual Info: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

MT6L58AFS

Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05

working of ic 8038

Abstract: marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
Contextual Info: MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3

Contextual Info: TO SH IBA MT3S03AT MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS 1.2 ±0 .0 5 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n J-J-lgll V^Ulll 0.8 ± 0.05 U.111

working of ic 8038

Abstract: working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
Contextual Info: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic

IC 7486

Abstract: 534-1 MAG 14241 MT3S03AT ic 7815 f 9444 TA 7129 13765
Contextual Info: MT3S03AT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AT VHF~UHF 帯低電圧動作•低位相雑音タイプ • 単位: mm 雑音特性が優れています。: NF = 1.4dB 標準 , |S21e|2 = 8dB (標準) (f = 2 GHz)

Contextual Info: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-

Contextual Info: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES

2SC5256

Abstract: MT3S03AS MT3S03AT MT6L51AE
Contextual Info: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

MT3S03AS

Abstract: MT3S03AT MT3S04AS MT3S04AT MT6L52AE
Contextual Info: TOSHIBA MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 V in in in OO o 2 o o - F MOUNTED DEVICES

MT3S03AS

Abstract: MT3S03AT MT6L03AT
Contextual Info: TO SH IBA MT6L03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L03AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

MT3S03AS

Abstract: MT3S03AT MT6C03AE
Contextual Info: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)

Contextual Info: MT6L03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold

Contextual Info: MT6L03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6C03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C03AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6

Contextual Info: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6