MT3S06FS Search Results

210E

Abstract: 600E MT3S06FS 1200E-01
Contextual Info: MT3S06FS SPICE parameters UCB SPICE 2G6 20020704 NET LIST .SUBCKT MT3S06FS 1 2 3 Le1 Le2 Ceg1 Ceg2 Lb1 Lb2 Cbg1 Cbg2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 3 6 6 9 6 0 9 0 2 5 5 8 5 0 8 0 1 4 4 7 4 0 7 0 5 6 7 8 7 9 9 20 12 20 8 17

MT3S06FS

Contextual Info: MT3S06FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06FS 単位: mm • 雑音特性が優れています。 2 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.2±0.05 Buffer 用途に優れています。 0.6±0.05 0.35±0.05

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic

MT6L76FS

Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded

transistor amplifier VHF/UHF

Abstract: MT3S06FS
Contextual Info: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 8.5 dB f = 2 GHz 1 3 2 0.1±0.05 +0.02 Lead (Pb)-free. 0.8±0.05 1.0±0.05

Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage

MT3S06FS

Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)

MT6L76FS

Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10

MT6L58AFS

Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05

MT3S06FS

Contextual Info: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05

MT3S06FS

Contextual Info: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3

Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)

MT3S04AFS

Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

IC MARKING 1005 5 pin

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones