MX29GL640E
Abstract: MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs MXIC Flash MX29GL640E/H/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21
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EN29GL064H/L/T/B
MX29GL640E/H/L/T/B
MX29GL640E/H/L/T/B
EN29GL064H/L/T/B
500us
500ns
200ns
MX29GL640E
MX29GL640EB
MX29GL640EL
MX29GL640ET
00C2H
220ch
2201H
mx29gl640
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KH25L3205
Abstract: KH25L3205D EN25Q32 EN25 SOP 8 200MIL EN25Q32A mxic KH25L VDFN
Text: Eon Silicon Solution Inc. Application Note EON EN25Q32A vs MXIC KH25L3205D Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.
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EN25Q32A
KH25L3205D
KH25L3205D
EN25Q32A
200mil
100ns
KH25L3205
EN25Q32
EN25
SOP 8 200MIL
mxic
KH25L
VDFN
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MX25L25635E
Abstract: mx25l25635 MX25L256 EN25QH256 EN25QH 32768KB MX25L25
Text: Eon Silicon Solution Inc. Application Note EON EN25QH256 vs MXIC MX25L25635E Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.
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EN25QH256
MX25L25635E
MX25L25635E
EN25QH256
EN25QH256ase
100ns
mx25l25635
MX25L256
EN25QH
32768KB
MX25L25
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MX29GL128eh
Abstract: EN29GL128H EN29GL128 MX29GL128 MX29GL128E 00C2H
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs MXIC Flash MX29GL128EH/L This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com
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EN29GL128H/L
MX29GL128EH/L
MX29GL128EH/L
EN29GL128H/L
500ns
200ns
MX29GL128eh
EN29GL128H
EN29GL128
MX29GL128
MX29GL128E
00C2H
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EN29LV160BB
Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com
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EN29LV160B
MX29LV160D
MX29LV160D
EN29LV160B
EN29LV160BB
EN29LV160BT
MX29LV160DB
MX29LV160DT
2249h
mxic
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EN29LV320BB
Abstract: EN29lv320BT MX29LV320DB EN29LV320B MX29LV320D MX29LV320DT
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV320B vs MXIC Flash MX29LV320D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com
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EN29LV320B
MX29LV320D
MX29LV320D
EN29LV320B
EN29LV320BB
EN29lv320BT
MX29LV320DB
MX29LV320DT
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MX25L1605D
Abstract: EN25F16 mxic mx25l1605 application 6mmx5mm
Text: Eon Silicon Solution Inc. Application Note EON EN25F16 vs MXIC MX25L1605D Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 01/11
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EN25F16
MX25L1605D
MX25L1605D
EN25F16
150mil
200mil
mxic
mx25l1605
application
6mmx5mm
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AMD flash
Abstract: mxic MX29L160 MX29F004 MX29f001 MX29F002 MX29F016 MX29F022 MX29F040 MX29F100
Text: MACRONIX Page: INTERNATIONAL Co., LTD. 1 V2.3 Design Notes: The sample-code is used to describe how to design the s/w for MXIC flash. The following sample codes are suitable for all of AMD compatible flash, as MX29F001, MX29F100, MX29F002 N , MX29F022(N), MX29F200, MX29F004, MX29F040, MX29F400, MX29F800,
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MX29F001,
MX29F100,
MX29F002
MX29F022
MX29F200,
MX29F004,
MX29F040,
MX29F400,
MX29F800,
MX29F016,
AMD flash
mxic
MX29L160
MX29F004
MX29f001
MX29F016
MX29F040
MX29F100
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AM29F040B
Abstract: EN29F040A
Text: APPLICATION NOTE EN29F040A EN29F040A Application Note 4 Megabit 512K x 8-bit Flash Memory Uniform Sector Flash Memory, CMOS 5.0 Volt-only The EN29F040A is a high-performance 4-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC
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EN29F040A
EN29F040A
AM29F040B
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smd 1gw
Abstract: 1GW smd code transistor 93C46 dip 1GW smd code smd 1gw 23 1gw 82 smd LF8200 BPA16 HSIP-002 BPA12
Text: INDEX PRELIMINARY MX98725 APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98725. In details, this
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MX98725
MX98725.
MX98725
PM0525
smd 1gw
1GW smd code transistor
93C46 dip
1GW smd code
smd 1gw 23
1gw 82 smd
LF8200
BPA16
HSIP-002
BPA12
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E108998
Abstract: Belden, E108998, 16 AWG CABLE E138034 CABLE E108998 MX98728EC E108998, 16 AWG CABLE 4PR24 1583a 4pr24 e108998 marking code C66 Belden, E108998 st6118
Text: PRELIMINARY MX98728EC APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the Implementation of a generic bus 100Base-TX Fast Ethernet node using MXIC highly integrated single chip Fast Ethernet controller MX98728EC series. Most description in this application note applied to both
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MX98728EC
100Base-TX
MX98728EC
MX98728AEC
MX98728AEC
E108998
Belden, E108998, 16 AWG CABLE
E138034
CABLE E108998 MX98728EC
E108998, 16 AWG CABLE
4PR24
1583a 4pr24 e108998
marking code C66
Belden, E108998
st6118
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EN29LV800A
Abstract: EN29LV800B
Text: APPLICATION NOTE EN29LV800B EN29LV800B Application Note 8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only The EN29LV800B is a high-performance 8-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC
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EN29LV800B
EN29LV800B
1024K
16-bit)
EN29LV800A,
EN29LV800B.
EN29LV800B,
EN29LV800A.
EN29LV800A
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EN29LV400
Abstract: EN29LV400A
Text: APPLICATION NOTE EN29LV400A EN29LV400A Application Note 4 Megabit 512K x 8-bit / 256K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only The EN29LV400A is a high-performance 4-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like SPANSION(AMD, Fujitsu), MXIC
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EN29LV400A
EN29LV400A
16-bit)
EN29LV400,
EN29LV400A.
EN29LV400
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WINBOND APPLICATION NOTE
Abstract: WINBOND Serial flash cross reference S25FL080A mxic spi flash MXIC Lot Code Identification AT25F4096 MXIC SPI Flash MXIC serial Flash MX25L8005
Text: 4M-8M SPI Cross Reference Spansion , STM®, SST®, MXIC, Atmel® & Winbond® Application Note By: Victor Li 1. Introduction Spansion provides a wide range of SPI Serial Peripheral Interface Flash from 4 Mbits to 128 Mbits. The 4-Mbit and 8-Mbit SPI Flash are two of the most popular densities used and are produced by a number of
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M25P40/80,
SST25VF040B/080B,
MX25L400/800,
AT25F4096
W25p40/80.
WINBOND APPLICATION NOTE
WINBOND Serial flash cross reference
S25FL080A
mxic
spi flash
MXIC Lot Code Identification
MXIC SPI Flash
MXIC serial Flash
MX25L8005
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Untitled
Abstract: No abstract text available
Text: MXIC MX28F002T/ B 2 M -BIT[2 5 6 K X 8 ] CMOS FLASH MEMORY FEATURES 262,144 bytes by 8-bit organization Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 10OnAmaximum standby current Programming and erasing voltage 12V ± 5%
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OCR Scan
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MX28F002T/
70/90/120ns
10OnAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
40lln
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Untitled
Abstract: No abstract text available
Text: MXIC M X29L8000T/ B 8 M-BIT [1 M X 8 ] CMOS VOLTAGE 3 V ONLY FLASH EEPROM S IN G L I FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation
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X29L8000T/
40-Lead
-100mA
100mA
16K-block
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PDF
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Untitled
Abstract: No abstract text available
Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture
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OCR Scan
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MX29F1610
120/150ns
150ms
Int03/11/1998
44-PIN
48-PIN
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Untitled
Abstract: No abstract text available
Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture
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OCR Scan
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70/90/120ns
MX29F1610A/
44-PIN
48-PIN
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Untitled
Abstract: No abstract text available
Text: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%
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OCR Scan
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MX28F2000P
100jiA
16-KB
100mA
MX28F2000PTC-90C4
MX28F2000PTC-12C4
MX28F2000PRC-90C4
MX28F2000PRC-12C4
MX28F2000PPC-90C4
150ns
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Untitled
Abstract: No abstract text available
Text: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%
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OCR Scan
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MX28F002T/B
144x8
70/90/120ns
100jiAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
QGQ117ti
MX2SF002T/B
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Untitled
Abstract: No abstract text available
Text: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current
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OCR Scan
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MX28F21
144x8/131
072x16
70/90/120ns
100nAmaximum
16K-Byte
96K-Byte
128K-Byte
MX28FS100T
MX28F21OOT
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block diagram for automatic room power control layout
Abstract: 28F2100B
Text: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%
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OCR Scan
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144x8/131
072x16
70/90/120ns
50jas
16K-Byte
96K-Byte
128K-Byte
100mA
X28F2100B
block diagram for automatic room power control layout
28F2100B
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Untitled
Abstract: No abstract text available
Text: IW DCIC FEATURES MX29F1 61 1 16M -BIT[2M x 8 /1 M x 1 61 CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JED EC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns
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OCR Scan
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100/120/150ns
50/60/70ns
150ms
MX29F1
44-PIN
MX29F161
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X29L8000
Abstract: No abstract text available
Text: IW DCIC M X 29L8000T/B 8M-BIT [1 M x S] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Auto Page Program operation - Automatically programs and verifies data at specified addresses - Internal address and data latches for 128 bytes per page • Low power dissipation
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OCR Scan
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120ns
16K-block)
16K-block
50ms00.
MX29L8000T/B
X29L8000
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