MX28F2100B
Abstract: No abstract text available
Text: Introduction Selection Guide PRELIMINARY 28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current
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MX28F2100B
8/128K
144x8/131
072x16
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
MX28F2100B
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28F002-T
Abstract: No abstract text available
Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T 28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package
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28F200-T
28F200-B
28F002-T
28F002-B
28F020
MX28F2100T
MX28F2100B
MX28F002-T
MX28F002-B
MX28F2000P
28F002-T
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28F2100
Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
Text: PRELIMINARY 28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%
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PDF
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MX28F2100B
8/128K
144x8/131
072x16
70/90/120ns
100uA
16K-Byte
96K-Byte
128K-Byte
PM0382
28F2100
block diagram for automatic room power control
MX28F2100B
28F2100B-70
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MX-1610
Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY
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MX26C512A
MX26C1000A
MX26C1024A
MX25L4004A
MX29F1610
MX26C512A,
512K-bit
MX26C512A
MX9691
MX-1610
intel 28f200
db86082
mx1610
intel 80586
MX28F002
MXIC flash disk controller
db86082b
MX26C1000A
KM29N32000
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Untitled
Abstract: No abstract text available
Text: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current
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OCR Scan
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144x8/131
072x16
70/90/120ns
10OnAmaximum
16K-Byte
96K-Byte
128K-Byte
44-PIN
48-PIN
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Untitled
Abstract: No abstract text available
Text: [ P : R iiy [ lD Î M [ F S Y M X IC M 28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%
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MX28F2100B
144x8/131
072x16
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
DDD1104
MX28F2100BMC-70
MX28F21OOBMC-90
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Untitled
Abstract: No abstract text available
Text: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL
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28F200BX-TL/BL,
28F002BX-TL/BL
x8/x16
28F200BX-TL,
28F200BX-BL
16-bit
32-bit
28F002BX-TL,
28F002BX-BL
16-KB
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Untitled
Abstract: No abstract text available
Text: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V
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28F200BX-TL/BL,
28F002BX-TL/BL
x8/x16
28F200BX-TL,
28F200BX-BL
16-bit
32-bit
28F002BX-TL,
28F002BX-BL
16-KB
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block diagram for automatic room power control layout
Abstract: 28F2100B
Text: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%
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OCR Scan
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PDF
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144x8/131
072x16
70/90/120ns
50jas
16K-Byte
96K-Byte
128K-Byte
100mA
X28F2100B
block diagram for automatic room power control layout
28F2100B
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GE capacitor 28f
Abstract: No abstract text available
Text: in te ! 28F2Q0BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY H Low Voltage Operation fo r Very Low Power Portable Applications — VCc = 3.3V + 0 .3 V eg V e ry H ig h -P e rfo rm a n c e R ead — 150 ns M axim um A c ce ss T im e
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28F2Q0BX-TL/BL,
28F002BX-TL/BL
28F200BX-TL,
28F200BX-BL
16-bit
32-bit
28F002BX-TL,
28F002BX-BL
Applicatio/28F
AP-363
GE capacitor 28f
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29044
Abstract: No abstract text available
Text: 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in
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28F200BX-TL/BL,
28F002BX-TL/BL
x8/x16
28F200BX-TL,
28F200BX-BL
16-bit
32-bit
28F002BX-TL,
28F002BX-BL
16-KB
29044
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80L188EB
Abstract: No abstract text available
Text: Â W Â K K g i 0K11F@ 1^IM ]Ä?0 K1 in te i 28F200BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16,256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCC = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture
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0K11F@
28F200BX-TL/BL,
28F002BX-TL/BL
28F200BX-L:
44-Lead
56-Lead
28F002BX-L:
40-Lead
E28F200BX-L150
PA28F200BX-L150
80L188EB
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h5ra
Abstract: NTE 5432
Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%
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OCR Scan
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PDF
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144x8/131
072x16
70/90/120ns
100nAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
Q0-Q15
XX90H
h5ra
NTE 5432
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