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    MX29F1 Price and Stock

    Macronix International Co Ltd MX29F100TTC-70

    64KX16 FLASH 5V PROM, 70NS, PDSO48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MX29F100TTC-70 984
    • 1 $1.875
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    • 100 $1.875
    • 1000 $0.8625
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    Macronix International Co Ltd MX29F1610MC-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MX29F1610MC-12 11
    • 1 $6.72
    • 10 $3.36
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    • 1000 $3.36
    • 10000 $3.36
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    Macronix International Co Ltd MX29F100BMC70G

    1M-BIT [128K X 8/64K X 16] CMOS FLASH MEMORY Flash, 64KX16, 70ns, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MX29F100BMC70G 32
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    Macronix International Co Ltd MX29F1610AMC90

    Electronic Component
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    ComSIT USA MX29F1610AMC90 14
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    Others MX29F1610BTC90

    INSTOCK
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    Chip 1 Exchange MX29F1610BTC90 12,000
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    MX29F1 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MX29F100T Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100T/B Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TMC-12 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TMC-55 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TMC-70 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TMC-90 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTA-12 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTA-90 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTC-12 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTC-55 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTC-70 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F100TTC-90 Macronix International 1M-BIT [128K x 8/64Kx16] CMOS FLASH MEMORY Original PDF
    MX29F1610 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-10 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-12 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-90 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A/B Macronix International 16M-BIT [2M x8/1M x16] CMOS Original PDF
    MX29F1610B-10 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-12 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF

    MX29F1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    29f1615

    Abstract: MX29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns PM0615 JUN/15/2001 29f1615 MX29f1615 PDF

    29F100T

    Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100 PDF

    MX29F100T

    Abstract: No abstract text available
    Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T PDF

    29F100T

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte CompatiPM0548 DEC/21/1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


    OCR Scan     		MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN PDF

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05 PDF

    MX29F1611

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


    Original     		MX29F1611 16M-BIT 100/120/150ns 50/60/70ns 150ms MX29F1611 PDF

    MX29F1610

    Abstract: 29F1610-12 00F1H
    Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture


    Original     		MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610TC-12C3 1/2 IL08 16 M (2,097,152 x 8/1,048,576 x 16)-BIT FLASH EPROM —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 INPUTS A0 - A19 BYTE CE1, CE2


    Original     		MX29F1610TC-12C3 Q15/A-1 MX29F1610 PDF

    MX-1610

    Abstract: No abstract text available
    Text: APPLICATION NOTE MX29F1610 16Mb FLASH MEMORY Since the erase/program time for flash memory are depended on the operation temperature, number of cycle, Vcc, and other factors. This application note is trying to optimize the erase/program performance by using the polling technology to check the


    Original     		MX29F1610 F16MSetupAddr1] F16MSetupCmd1; F16MSetupAddr2] F16MSetupCmd2; F16MSetupAddr3] MX1610 MX-1610 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns P14-17 MAY/05/1999 OCT/01/1999 NOV/03/1999 PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A/B 16M-BIT 90/100/120ns May/13/1998 Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 MX29F1610B MX29F1610A PDF

    Untitled

    Abstract: No abstract text available
    Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Sector protect/unprotect for 5V only system or 5V/


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 PDF

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B PDF

    Untitled

    Abstract: No abstract text available
    Text: r a iU M — IWXIC FEATURES ì m y MX29F1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns


    OCR Scan     		MX29F1611 100/120/150ns 50/60/70ns 150ms det98 PM0440 44-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80ms-- 80us-- PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001 PDF

    29f1615

    Abstract: MX29f1615 29f1615-10
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 29f1615 MX29f1615 29f1615-10 PDF

    29F1615

    Abstract: mx29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns compatibl23 42-PIN PM0615 29F1615 mx29f1615 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte single-pow003 PM0548 PDF