MV835 Search Results

diode 218

Abstract: MV838 MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837
Contextual Info: ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 13.5 16.2 19.8 24.3 29.7 35.1 42.3 50.4 61.2 73.8 90.0 15.0 18.0 22.0 27.0 33.0 39.0

MV840

Contextual Info: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz

MV838

Abstract: MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV840
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 13.5 15.0 16.5 16.2 18.0 19.8 19.8 22.0 24.2 24.3 27.0 29.7

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 Q, QUALITY FACTOR Vr = 4 Vdc f = 50 MHz MIN TYP 35 30 30 25 25 30 30 25 20 25 20 25 20 15 20 15 20

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

MV2215

Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

MV830

Abstract: C1406 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838
Contextual Info: MV830 thru MV840 SILICON Silicon voltage-variable capacitance diodes, signed for electronic-tuning applications from de­ to 15 1 0 0 pF. cathode end MAXIMUM RATINGS <TC = 2 5 ° C unless otherwise noted) Sym bol Value Unit Reverse Voltage VR 30 Vdc Forward Current

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

V839

Contextual Info: K n o x S e m ic o n d u c t o r , In c ABRUPT VARACTOR DIODES MV830 - MV840 TYPE N UM BER C t DIODE C APACITA NCE Q, Q U A LIT Y FACTO R Vr = 4 Vdc f = 50 MHz MIN TYP Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX TR , TU N IN G RATIO f = 1 MHz C *4V / C-25V MIN

30223 varactor sod323

Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Contextual Info: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

diod LT 741

Abstract: 1217A S0171 S0122 738s MVI40 0068AH
Contextual Info: m s n elect: ABRUPT - HYPERABRUPT Uh HERMETICALLY SEA LED G L A S S P A C K A G E D TUNING DIOD ES ELE C T R IC A L CHARACTERISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS TYPE R A T IO C2/C20 NO m m /ty p LOW INDUCTANCE FOR USE TO 2.5 6Hz

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NU M BER C t DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF NOM MIN MAX Q, Q U ALITY FACTOR Vr = 4 Vdc f = 50 M Hz TYP MIN TR. TU N IN G RATIO f = 1 MHz C*4V / C-25V MIN TYP

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

1N5450A

Abstract: MV1644 MV1624 MV1636 MV1641 1N5140 1N5470A
Contextual Info: •MOTOROLA SC -CDIODES/OPTO} 636.7255 MOTOROLA 34 SC DET|b3b?5S5 <D I O D E S / O P T O 34C 003ai0D t | ~ 38100 D 1—I f ' SILICON TUNING DIODE DICE continued) 1C5139 DIE NO. — SERIES LINE SOURCE — DV61 This die provides performance equal to or better than that of