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    MTD10 Search Results

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    MTD10 Price and Stock

    Adam Technologies Inc DMT-D-1-03

    CONN RCPT HSG 3POS 3.00MM
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    DigiKey DMT-D-1-03 Bag 5,000 1
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    RS DMT-D-1-03 Bulk 12 Weeks 5,000
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    Adam Technologies Inc DMT-D-1-02

    CONN RCPT HSG 2POS 3.00MM
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    DigiKey DMT-D-1-02 Bag 4,872 1
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    Adam Technologies Inc DMT-D-1-04

    CONN RCPT HSG 4POS 3.00MM
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    DigiKey DMT-D-1-04 Bag 1,985 1
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    RS DMT-D-1-04 Bulk 12 Weeks 5,000
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    onsemi MTD10N10ELT4

    MOSFET N-CH 100V 10A DPAK
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    Quest Components MTD10N10ELT4 63
    • 1 $1.3663
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    • 100 $1.093
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    Samtec Inc MMTD-10-22-L-06.00-S

    .100" MINI MATE DOUBLE ROW DISCR
    Free Sample
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    DigiKey MMTD-10-22-L-06.00-S Bulk 1
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    Avnet Americas MMTD-10-22-L-06.00-S Bulk 1
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    Master Electronics MMTD-10-22-L-06.00-S
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    Sager MMTD-10-22-L-06.00-S 1
    • 1 $11
    • 10 $10.16
    • 100 $7.97
    • 1000 $7.54
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    Find more MTD10 price and stock on Findchips.com

    MTD10 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTD100U Mitel Semiconductor MODEM, DSL, 8Mbps Original PDF
    MTD100U Multi-Tech Systems External ADSL USB Modem Original PDF
    MTD10N05E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD10N05E Motorola TMOS power FET. 50 V, 10 A, Rds(on) 0.1 Ohm. Scan PDF
    MTD10N05E Motorola Switchmode Datasheet Scan PDF
    MTD10N05E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTD10N05E Unknown FET Data Book Scan PDF
    MTD10N05E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD10N05E1 Motorola TMOS power FET. 50 V, 10 A, Rds(on) 0.1 Ohm. Scan PDF
    MTD10N05E-1 Unknown FET Data Book Scan PDF
    MTD10N05E-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD10N08E1 Motorola FET Transistor: TMOS IV Power Field Effect Transistor: N-Channel Enhancement-Mode DPAK for Surface Mount or Insertion Mount Original PDF
    MTD10N10EL On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD10N10EL On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD10N10EL On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD10N10EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD10N10EL On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 100V, 5A, Pkg Style DPAK Scan PDF
    MTD10N10EL/D On Semiconductor TMOS POWER FET 10 AMPERES 100 VOLTS Original PDF
    MTD10N10EL-D On Semiconductor TMOS E-FET Power Field Effect Transistor DPAK for Original PDF
    MTD10N10ELG On Semiconductor Transistor Mosfet N-CH 100V 10A 3DPAK RAIL Original PDF

    MTD10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTD10N10EL SMD310
    Text: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM


    Original     		PDF MTD10N10EL/D MTD10N10EL MTD10N10EL/D* AN569 MTD10N10EL SMD310

    10N10EL

    Abstract: 10EL fet 10n 10el 10N10E
    Text: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.


    Original     		PDF MTD10N10EL MTD10N10EL/D 10N10EL 10EL fet 10n 10el 10N10E

    10n10el

    Abstract: 10N10E AN569 MTD10N10EL MTD10N10ELT4 10n 10el dpak 369C
    Text: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.


    Original     		PDF MTD10N10EL MTD10N10EL/D 10n10el 10N10E AN569 MTD10N10EL MTD10N10ELT4 10n 10el dpak 369C

    10n10el

    Abstract: 10N10 AN569 MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G dpak 369C
    Text: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient


    Original     		PDF MTD10N10EL MTD10N10EL/D 10n10el 10N10 AN569 MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G dpak 369C

    EIA-481-B

    Abstract: No abstract text available
    Text: MTDS Series – 5 x 7 Ceramic SMD TCXO ¾ Low Profile SMD TCXO ¾ Clipped Sinewave Output ¾ RoHS Compliant ¾ Low Power Consumption ELECTRICAL SPECIFICATIONS: Frequency Range Frequency Stability vs Temperature * Operating Temperature Range Storage Temperature Range


    Original     		PDF 600MHZ 000MHZ EIA-481-B, 200mm MTD102908F EIA-481-B

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


    Original     		PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TD10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD10N10EL TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM


    OCR Scan     		PDF TD10N10EL/D MTD10N10EL MTD10N10EL/D

    mtd10n05e

    Abstract: CASE369A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is


    OCR Scan     		PDF MTD10N05E ti3b7S54 mtd10n05e CASE369A

    transistor IRF 630

    Abstract: MTD10N08E ym 238
    Text: MOTOROLA SC X S T R S /R F IME D I fc>3fci7254 QEH04a3 1 MOTOROLA I Order this data sheet by MTD10N08E/D E3 SEMICONDUCTOR TECHNICAL DATA MTD10N08E Designer's Data Sheet TM OS IV Pow er Field Effect Transistor IM-Channel Enhancement-Mode D PA K for Surface Mount or Insertion Mount


    OCR Scan     		PDF 3fci7254 QEH04a3 MTD10N08E/D MTD10N08E CM262 transistor IRF 630 MTD10N08E ym 238

    tunnel diode high frequency

    Abstract: MTD0208 MTD0208-M23 tunnel detector tunnel MTD-0218 MTD0218-M23
    Text: BROADBAND TUNNEL DIODE DETECTORS metelics m CORPORATION The MTD Series of Broadband Tunnel Detectors offers high sensitivity and low VSWR. These detectors are available in several standard packages. Special packages and opposite polarities are available upon request. These are designed and m anufac­


    OCR Scan     		PDF MTD-1002 MTD-0208 MTD-0818 MTD-0218 MTD0208-M23 MTD0818-M23 -20dBm, MTD1002-M23 -20dBm tunnel diode high frequency MTD0208 tunnel detector tunnel MTD0218-M23

    CY 6152

    Abstract: MMDF4N02 1N4I48
    Text: « ik Micro Linear A D V A N C E IN F O R M A T IO N _ ML4862 Battery Power Control 1C GEN ERAL DESCRIPTION FEATURES Th e M L4 8 6 2 is a com p lete solution for D C to D C co n ve r­ sion and p o w e r m anagem ent in multi-cell battery pow ered


    OCR Scan     		PDF ML4862 32-PIN CY 6152 MMDF4N02 1N4I48

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    siemens THY F 75 A 80

    Abstract: siemens thyodul Siemens MTT 95 A 12 N siemens THY M 75 A SIEMENS THYRISTOR thyodul siemens thyodul MTT40A 12 n siemens THY F 75 A Siemens MTT 95 A 06 N MTT40A MTT95A
    Text: SIEMENS AKTIENGESELLSCHAF QBE t 6235bOS OülSbHS H • S I E Í ■ " p % 3 S~-A3 Circuit Configurations Available MTT40 A . MTT 95 A, MTD 40 A . MTD 95 A MDT40A.MDT95A Fully controlled version MTT AK K |—<>— — » 2 \L. Half-controlled version


    OCR Scan     		PDF 023SbOS MTT40A. MTT95A, MDT40A. MDT95A MTT100A. MTT120A, MDT100A. MDT120A, ThyL75A siemens THY F 75 A 80 siemens thyodul Siemens MTT 95 A 12 N siemens THY M 75 A SIEMENS THYRISTOR thyodul siemens thyodul MTT40A 12 n siemens THY F 75 A Siemens MTT 95 A 06 N MTT40A MTT95A

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Text: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20