Untitled
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13
|
Original
|
MT6L77FS
MT3S11FS
MT3S106FS
|
PDF
|
MT6L76FS
Abstract: No abstract text available
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
|
Original
|
MT6L76FS
MT3S06FS
MT3S106FS
MT6L76FS
|
PDF
|
60GHz transistor
Abstract: MT3S106FS 60Ghz germanium transistors NPN
Text: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:|S21e|2=10dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05
|
Original
|
MT3S106FS
60GHz transistor
MT3S106FS
60Ghz
germanium transistors NPN
|
PDF
|
MT6L77FS
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
|
Original
|
MT6L77FS
MT3S11FS
MT3S106FS
MT6L77FS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
|
Original
|
MT6L67FS
MT3S36FS
MT3S106FS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
|
Original
|
MT6L75FS
MT3S07FS
MT3S106FS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10
|
Original
|
MT6L75FS
MT3S07FS
MT3S106FS
|
PDF
|
MT6L76FS
Abstract: No abstract text available
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10
|
Original
|
MT6L76FS
MT3S06FS
MT3S106FS
MT6L76FS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 8
|
Original
|
MT6L67FS
MT3S36FS
MT3S106FS
|
PDF
|
60Ghz
Abstract: 60GHz transistor MT3S106FS MT3S36FS MT6L67FS mt3s36
Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 Q2 MT3S106FS 6 2 5 3 4 0.48 +0.02 -0.04 Three-pin fSM mold products are corresponded
|
Original
|
MT6L67FS
MT3S106FS
MT3S36FS
60Ghz
60GHz transistor
MT3S106FS
MT3S36FS
MT6L67FS
mt3s36
|
PDF
|
IC-2580
Abstract: TOSHIBA GLASS MOLD 60Ghz 60GHz transistor MT3S07FS MT3S106FS MT6L75FS
Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 Q2 MT3S106FS 6 2 5 3 4 0.48 +0.02 -0.04 Three-pin fSM mold products are corresponded
|
Original
|
MT6L75FS
MT3S106FS
MT3S07FS
IC-2580
TOSHIBA GLASS MOLD
60Ghz
60GHz transistor
MT3S07FS
MT3S106FS
MT6L75FS
|
PDF
|
60GHz transistor
Abstract: 60Ghz MT3S106FS
Text: MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.2dB @f=2GHz • High Gain:|S21e|2=10dB (@f=2GHz) 0.6 ±0.05 • 3 2 0.1±0.05 1 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
MT3S106FS
60GHz transistor
60Ghz
MT3S106FS
|
PDF
|
60GHz transistor
Abstract: 60Ghz MT3S06FS MT3S106FS MT6L76FS toshiba Ta
Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 Q2 MT3S106FS 6 2 5 3 4 0.48 +0.02 -0.04 Three-pin fSM mold products are corresponded
|
Original
|
MT6L76FS
MT3S106FS
MT3S06FS
60GHz transistor
60Ghz
MT3S06FS
MT3S106FS
MT6L76FS
toshiba Ta
|
PDF
|
60Ghz
Abstract: 60GHz transistor MT3S106FS MT3S11FS MT6L77FS TOSHIBA GLASS MOLD
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0.05 Q2 MT3S106FS 6 2 5 3 4 0.48 +0.02 -0.04 Three-pin fSM mold products are corresponded
|
Original
|
MT6L77FS
MT3S106FS
MT3S11FS
60Ghz
60GHz transistor
MT3S106FS
MT3S11FS
MT6L77FS
TOSHIBA GLASS MOLD
|
PDF
|
|
TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
|
Original
|
BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
|
PDF
|
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
|
Original
|
SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
|
PDF
|
RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
|
Original
|
SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
|
PDF
|
sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
|
Original
|
BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
|
PDF
|
MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
|
Original
|
BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
|
PDF
|
MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
|
Original
|
2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
|
PDF
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
PDF
|
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
|
Original
|
SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
|
PDF
|
MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
|
Original
|
2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
|
PDF
|
2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
|
Original
|
SCE0004I
2SC380TM
2sc5066
MT3S111P
MT3S111
toshiba transistors catalog
TIM4450-4UL
TGI1314-50L
MT3S106
MT4S200T
X-band low noise amplifiers toshiba
2SC3136
|
PDF
|