MT3S04T Search Results

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Toshiba America Electronic Components MT3S04T
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Bristol Electronics	MT3S04T		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MT3S04T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
2SK3075 equivalent Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz	Original	PDF	2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain Unit in mm 1.2 ± 0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz)	OCR Scan	PDF	T3S04T MT3S04T
MT3S04T Abstract: No abstract text available Text: T O SH IB A TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3SQ4T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.2 dB at f = 1 GHz • High G ain : G ain = 12.5 dB (at f = 1 GHz) U nit in mm MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	MT3S04T MT3S04T
MT3S04T Abstract: NF 924 Text: TO SHIBA MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE TENTATIVE MT3S04T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz)	OCR Scan	PDF	MT3S04T CHARACTER89 IS21I2 MT3S04T NF 924