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| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE T3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain Unit in mm 1.2 ± 0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) |
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T3S04T MT3S04T |