am29ma16
Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM51256_ 32,768-W ord x 8-B it CM OS STATIC RAM GENERAL DESCRIPTION The MSM51256 is a 32768-word by 8-bit CMOS static RAM featuring a 5V power supply operation and direct TTL input/output compatibility. Since the circuitry is completely static,
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MSM51256_
MSM51256
32768-word
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MSM51256GS
Abstract: MSM51256 MSM51256RS
Text: O K I semiconductor MSM51256_ 3 2 ,7 6 8 -W o rd x 8 -B it C M O S STA TIC R A M GENERAL DESCRIPTION The MSM51256 is a 32768-word by 8-bit CMOS static RAM featuring a 5V power supply operation and direct TTL input/output compatibility. Since the circuitry is completely static,
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MSM51256
MSM51256
32768-word
MSM51256GS
MSM51256RS
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organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116
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LH5116
Am9128
CDM6116
HM6116A
HY6116
HM6116
MS6516
SRM2016
MK6116
CXK5816
organizational structure samsung
NMS256X8
MICRON Cross Reference
NMS256
256K RAM HM62256
MK6264
51256SL
TC5565 "cross reference"
MN44256
M5M5256
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSC2320A-XXYS9 262, 144 BY 36BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2320A-XXYS9 is a fully decoded, 262,144 words X 36 bit CMOS dynamic random access memory composed of eight 1 Mb DRAMs in SOJ MSM514256AJS and four 256 Kb drams in
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MSC2320A-XXYS9
36BIT
MSC2320A-XXYS9
MSM514256AJS)
MSM51256JS)
MSM511000AJS;
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MN12261
Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating
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N1224
16-DIP
18-DIP
SO-18D
14-DlP
MN12261
MN1225
N12c
M5M4400
256K RAM HM62256
47464
mn4464
n1224
MN41256A
44256 ram
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Untitled
Abstract: No abstract text available
Text: OKI M semiconductor S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random access memory composed of sixteen 1 Mb DRAMs in SOJ MSM514256AJS and eight 256 Kb drams
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MSC2321A-XXYS18
MSM514256AJS)
MSM51256JS)
MSM511000AJS;
-XXYS18
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EZ31
Abstract: MSM51256 MSC2321A8A-YS18
Text: 4bE D O K I • b ? 2 4 2 H G □ D Q cì?DS ibb « O K I J O K I S E M I C O N D U C T O R GROUP s e m ic o n d u c to r M S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random
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MSC2321A-XXYS18
MSC2321A-XXYS18
MSM514256AJS)
MSM51256JS)
MSM511000AJS;
2M24D
msc2321a-xxysi
T-46-23-18
EZ31
MSM51256
MSC2321A8A-YS18
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