MSM5116800 Search Results

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

MSM5116800A

Contextual Info: O K I Sem iconductor MSM5 1 1 6 8 0 0 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPT IO N The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5116800 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 116800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST PA G E M ODE T Y P E DESCRIPTION The MSM5116800A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E MODE T Y P E DESCRIPTION The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116800 B_ E2G0041-17-41 2,097,192-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800B achieves high integration, high-speed operation, and low-power

MSM5116800C

Abstract: SOJ28
Contextual Info: J2G0110-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5116800C l MSM5116800C 暫定 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116800CはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

a11u

Abstract: h a 431 transistor RAS 05 msm5116800 023ag
Contextual Info: O K I Semiconductor MSM5116800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5116800 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Sem iconductor MSM5 116800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a 2,097,152-w ord x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800 achieves high integration, high-speed operation, and low-power

MSM5116800A

Contextual Info: O K I Semiconductor MSM5116800 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST PA G E MODE T Y P E DESCRIPTION The MSM5116800A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

Contextual Info: J2G0041-17-41 作成：1998年 1月 MSM5116800B l 前回作成：1997年 5月 ¡ 電子デバイス MSM5116800B 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116800BはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

Contextual Info: O K I Semiconductor MSM5116800 2,097,152-W ord x 8-Bit D YN A M IC RAM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800 achieves high integration, high-speed operation, and low-power

a9ra

Contextual Info: J2G0110-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5116800C l MSM5116800C 暫定 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116800CはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックランダム

MSM5116800C

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

MSM5116800C

Abstract: SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

20 TI 54240

Abstract: MSM51VI6180
Contextual Info: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: MSM5116900-70 MSM5116900-80 B724e
Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.

m51171

Abstract: m32AG M5116
Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.