jedec MS-012-AA
Abstract: No abstract text available
Text: Plastic Packages for Integrated Circuits Small Outline Plastic Packages SOIC M8.15 (JEDEC MS-012-AA ISSUE C) N INDEX AREA 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE 0.25(0.010) M H B M INCHES E SYMBOL -B1 2 3 L SEATING PLANE -A- A D h x 45° -C- e
|
Original
|
MS-012-AA
jedec MS-012-AA
|
PDF
|
jedec MS-012-AA
Abstract: MS-012-AA ISSUE C MS-012-AA
Text: Plastic Packages for Integrated Circuits Small Outline Plastic Packages SOIC M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE N INDEX AREA H 0.25(0.010) M B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- e
|
Original
|
MS-012-AA
5M-1982.
jedec MS-012-AA
MS-012-AA ISSUE C
|
PDF
|
lk 46
Abstract: jedec 64-pin simm
Text: SYS32128ZK/LK - 010/012/015/017 ISSUE 1.3 January 1999 128K x 32 SRAM MODULE SYS32128ZK/LK - 010/012/015/017 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.3 : January 1999 Description Features
|
Original
|
SYS32128ZK/LK
128kx8
lk 46
jedec 64-pin simm
|
PDF
|
39f010
Abstract: 39f020 39F040 PM39F010-70JC PM39F040 39f0 555H A103 A114 A115
Text: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
|
Original
|
Pm39F010
Pm39F020
Pm39F040
Pm39F010:
Pm39F020:
Pm39F040:
39f010
39f020
39F040
PM39F010-70JC
PM39F040
39f0
555H
A103
A114
A115
|
PDF
|
39f020
Abstract: 39F010 39F040 555H A103 A114 A115
Text: PMC Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
|
Original
|
Pm39F010
Pm39F020
Pm39F040
Pm39F010:
Pm39F020:
Pm39F040:
39f020
39F010
39F040
555H
A103
A114
A115
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V • Automatic Erase and Byte Program - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time
|
Original
|
Pm39F010
Pm39F020
Pm39F040
Pm39F010:
Pm39F020:
Pm39F040:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \
|
OCR Scan
|
67S4000-85/10/12
MIL-STD-883
S4000
128Kx32
256Kx16
512Kx8)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM5164160 Series HM5165160 Series 64 M FP DRAM 4-Mword x 16-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-810A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The Hitachi H M 5164160 Series, H M 5165160 Series are 64M -bit dynamic RAMs organized as 4,194,304w ord X 16-bit. They have realized high perform ance and low pow er by em ploying CMOS process
|
OCR Scan
|
HM5164160
HM5165160
16-bit)
ADE-203-810A
16-bit.
50-pin
ns/60
|
PDF
|
790n
Abstract: 846C NTLTD7900N NTLTD7900NR2G
Text: NTLTD7900N Power MOSFET 8.5 A, 20 V, Logic Level, N−Channel Micro8] Leadless EZFETs are an advanced series of Power MOSFETs which contain monolithic back−to−back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These
|
Original
|
NTLTD7900N
NTLTD7900N/D
790n
846C
NTLTD7900N
NTLTD7900NR2G
|
PDF
|
1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
|
OCR Scan
|
GD0D12S
003S612
ml-S-19S00/477b
n1l-s-19s00/477a
1n58q2,
1ns804,
1ns806,
1ns807,
1h5809,
1ns811,
1N589
IN5809
1v500
1M5811
JANTX 1N5811
DIODE 1N5804
1N5896
j 5804
ns802
1N5809 equivalent
|
PDF
|
5165165
Abstract: 1729T
Text: HM5164165 Series HM5165165 Series 64M EDO DRAM 4-Mword x 16-bit 8k Refresh/4k Refresh HITACHI ADE-203-802A(Z) Preliminary Rev. 0.1 Oct. 24, 1997 Description The Hitachi H M 5164165 Series, H M 5165165 Series are 64M -bit dynamic RAMs organized as 4,194,304w ord X 16-bit. They have realized high perform ance and low pow er by em ploying CMOS process
|
OCR Scan
|
HM5164165
HM5165165
16-bit)
ADE-203-802A
16-bit.
50-pin
ns/60
5165165
1729T
|
PDF
|
HM514280AJ7
Abstract: m514280 hm514280 HM514280AJ8 HM514280AZ8 hm514280altt HM514280ALJ8 hm514280aj M514 HM514280AL
Text: H M 5 1 4 2 8 0 A /A L S e rie s Preliminary H M 5 1 S 4 2 8 0 A /A L S e rie s 262,144-word x 18-bit Dynamic Random Access Memory HITACHI The Hitachi HM514280A/AL are CMOS dynamic RAM organ ized as 2 6 2 ,1 4 4 -w o r d x 1 8 -b ii. H M 514280A /A L have realized higher density,
|
OCR Scan
|
144-word
18-bit
HM514280A/AL
14280A
400mil
40-pin
475-m
HM514280AJ7
m514280
hm514280
HM514280AJ8
HM514280AZ8
hm514280altt
HM514280ALJ8
hm514280aj
M514
HM514280AL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM51W16160B Series HM51W18160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-538 Z Preliminary Rev. 0.0 Mar. 11, 1996 Description The Hitachi HM51W16160B Series, HM51W18160B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology
|
OCR Scan
|
HM51W16160B
HM51W18160B
1048576-word
16-bit
ADE-203-538
576-word
16-bit.
|
PDF
|
zener diode marking 4x
Abstract: 846C NTLTD7900ZR2 NTLTD7900ZR2G
Text: NTLTD7900ZR2 Power MOSFET 9 A, 20 V, Logic Level, N−Channel Micro8] Leadless EZFETs are an advanced series of Power MOSFETs which contain monolithic back−to−back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These
|
Original
|
NTLTD7900ZR2
NTLTD7900ZR2/D
zener diode marking 4x
846C
NTLTD7900ZR2
NTLTD7900ZR2G
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers
|
OCR Scan
|
HM5118160BI
1048576-word
16-bit
ADE-203-580A
576-word
16-bit.
ns/70
ns/80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM514260D Series HM51S4260D Series 4M FP DRAM 256-kword 16-bit 512 refresh HITACHI ADE-203-510C (Z) Rev. 3.0 Nov. 17, 1997 Description The Hitachi HM514260D Series, HM51S4260D Series are CMOS dynamic RAMs organized as 262,144word X 16-bit. HM514260D Series, HM51S4260D Series have realized higher density, higher performance
|
OCR Scan
|
HM514260D
HM51S4260D
256-kword
16-bit)
ADE-203-510C
144word
16-bit.
|
PDF
|
5118165TT-6
Abstract: M5118165
Text: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 flm CMOS technology for high performance and low power. The H M 5118165 offers
|
OCR Scan
|
HM5118165
1048576-word
16-bit
ADE-203-636B
576-word
16-bit.
42-pin
50-pin
ns/60
ns/70
5118165TT-6
M5118165
|
PDF
|
51w18160
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-635A Z Rev. 1.0 Sep. 30, 1996 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and
|
OCR Scan
|
HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635A
576-word
16-bit.
51w18160
|
PDF
|
M51W
Abstract: No abstract text available
Text: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh HITACHI ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM 51W 16165 Series, HM 51W 18165 Series are CM OS dynam ic RAMs organized as 1,048,576-word X 16-bit. They employ the m ost advanced CMOS technology for high performance and
|
OCR Scan
|
HM51W16165
HM51W18165
16-bit)
ADE-203-650D
576-word
16-bit.
400-mil
42-pin
M51W
|
PDF
|
Nippon capacitors
Abstract: No abstract text available
Text: HB56RW832DZ J Series 32 MB FP DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-768B (Z) Rev.2.0 Nov. 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module
|
OCR Scan
|
HB56RW832DZ
32-bit,
ADE-203-768B
HB56RW832DZJ
16-Mbit
HM51W17400)
72-pin
Nippon capacitors
|
PDF
|
846C
Abstract: NTLTS3107P NTLTS3107PR2G
Text: NTLTS3107P Power MOSFET −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package Features • • • • • Low RDS on for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs
|
Original
|
NTLTS3107P
NTLTS3107P/D
846C
NTLTS3107P
NTLTS3107PR2G
|
PDF
|
TI410
Abstract: No abstract text available
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM 62W 16255H is an asynchronous high speed static RAM organized as 256-kword X 16-bit. It has realized high speed access tim e (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed
|
OCR Scan
|
HM62W16255H
256-kword
16-bit)
ADE-203-751A
16255H
16-bit.
400-mil
44-pin
TI410
|
PDF
|
THL64V4075ATG
Abstract: THL64V4075ATG-4
Text: TO SHIBA TH L64V407 5ATG-4,-5,-4S7-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications
|
OCR Scan
|
L64V407
304-WORD
64-BIT
THL64V4075ATG
TC5165165AFT/AFTS
40-ns
THL64V4075ATG-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM5164160 Series HM5165160 Series 4194304-word x 16bit Dynamic RAM HITACHI ADE-203-810 Z Preliminary, Rev. 0.0 Jul. 23, 1997 Description The Hitachi H M 5164160 Series, HM5165160 Series are 64M-bit dynamic RAMs organized as4,194,304word X 16-bit. They have realized high performance and low power by employing CMOS process
|
OCR Scan
|
HM5164160
HM5165160
4194304-word
16bit
ADE-203-810
64M-bit
304word
16-bit.
|
PDF
|
