MPS6513 TRANSISTOR Search Results

mps6514

Contextual Info: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO

MPS6513

Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
Contextual Info: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513

transistor mps6515

Abstract: MPS6519 MPS6515 complementary npn-pnp MPS6518 equivalent semiconductor mps6516 MPS6512 MPS6518 MPS6517 complementary npn-pnp power transistors
Contextual Info: DATA SHEET NPN MPS6512 MPS6513 MPS6514 MPS6515 PNP MPS6516 MPS6517 MPS6518 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series NPN and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications.

MPS6517

Abstract: MPS6518 MPS6519 MPS6513 MPS6515 R624 6518
Contextual Info: • MPS6517 MPS6518 MPS6519 bfci.53ti31 D0EÔ001 Oat. B A P X N AMER PHILIPS/DISCRETE bTE D AMPLIFIER TRANSISTOR General purpose p-n-p transistors in TO-92 envelopes. The complementary types are MPS6513 to MPS6515. QUICK REFERENCE DATA MPS6517 6518 6519 Collector-emitter voltage

Contextual Info: MPS6517 MPS6518 MPS6519 _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in TO-92 packages. The complementary types are MPS6513 to MPS6515. QUICK REFERENCE D A T A MPS6517 6518 6519 Collector-emitter voltage

BC548

Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
Contextual Info: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222

2N3904

Abstract: ic 74112 MPS6513
Contextual Info: SAM S UN G SEMICO NDU CTO R INC MPS6513 14E D • 7 ^ 4 1 4 2 QÜG7323 4 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vc£o=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Emitter \foltage Collector-Base Valtage

Contextual Info: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

MPS6544

Abstract: MPS6516 MPS-6544 MPS6512 MPS6513 MPS6515 MPS6519 2N4125 MPS6514 MPS6517
Contextual Info: MOTOROLA SC 6367254 -C XS TR S /R MOTOROLA SC J> F |fc .3 b 7 2 S M QDfllflll "i FJ 96D 8 1 8 11 XSTRS/R F 1 ' MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 V ceo Collector-Base Voltage

MPS6517

Contextual Info: MPS6517 MPS6518 MPS6519 ^ 5 3 ^ 3 1 0026001 06L> H A P X N AUER PHILIPS/DISCRETE bqE 7 V AMPLIFIER TRANSISTOR General purpose p-n-p transistors in TO-92 envelopes. The complementary types are MPS6513 to MPS6515. QUICK REFERENCE DATA MPS6517 Collector-emitter voltage

MPS6519 motorola

Abstract: mps6515 mps6512 mps6518 mps6513 TRANSISTOR MPS6514 MPS6517 MPS6519 transistor mps6515
Contextual Info: Tb M O T O R O L A SC -CXSTRS/R FJ 6367254 MOTOROLA SC XSTRS/R F DF|t3b72SM QDÛlflll 96D 8 1 8 1 1 1 ' M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 VCEO Collector-Base Voltage MPS6512 thru MPS6515

mps6513 TRANSISTOR

Abstract: 6514 TRANSISTOR MPS6513 MPS6514 MPS6515 MPS6517 MPS6519 6514 mi 6514
Contextual Info: b'îE ]> • bbSB'ìai QQST'ìTì ÔET MPS6513 MPS6514 MPS6515 IAPX N AUER PHILIPS/DISCRETE AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO -92 envelopes. T he co m p le m e nta ry types are M PS6517 to MPS6519. Q U IC K R E F E R E N C E D A T A

Contextual Info: í w MPS 6512 thru’ MPS 6515 r NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6512 th ru1 MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. EBC ABSOLUTE MAXIMUM RATINGS

MPS6514

Abstract: MPS6512 MPS 6512 WBSF
Contextual Info: ? :V ^ J ¥à •4 •> -' ■- <¿ MPS 6512 thru’ MPS 6515 âsi;ÿ NPN SILICON PLANAR EPITAXIAL TRANSISTORS là ' ' n i - CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­

15-watt audio amplifier

Abstract: MJ2252 MJ2251 Thordarson 200 watt audio amplifier ic MPS6513 MPS-65-13 MJ-2251
Contextual Info: MJ2251 SILICON MJ2252 ija @2 CASE 80 (o High-voltage NPN silicon power transistors, particu­ larly well suited for power output stages in television, radio, phonograph and other consumer product applications. N . q (TO-66) ) S T Y L E 1: PIN 1. B A S E

MPS6512

Abstract: transistor mps6515 MPS6513 MPS6514 MPS6515 MPS65L5
Contextual Info: .« g NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. E b 'c ABSOLUTE MAXIMUM RATINGS MPS6512/3

MPS6507

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 'c ^CBO ^CEO V EBO (V) Min (V) Min (VI Min MPS3711 30 30 6 0.625 0.05 MPS3903 60 40 6 0.625 0.2 PD (W) (A) @Tc=25Gc *C80 ^CB 'c es

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

2N4121

Abstract: 2N5219 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING V C E 0 PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VO LTAGE SECTION) hFE V CEO ^ob V C E (sat) tT toff PD \ <v c e r VOLTS TYPE MIN (hfe ) ) Ta @ ’c hFE

2N2222A TO-18

Abstract: 2N2222 to92 2N2222A TO-92 2N3904 TO-92 type 2N2222 TO-92 2N6428 J 2N2369 2N1711 2N1893 2N2219
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bbS3131 G Q l b n a S ■ T-2.7-0J 14 Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE . PKG „ ' . 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

MPS3563

Abstract: MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709
Contextual Info: TO-92 Plastic Package Transistore NPN Maximum Ratings Type No. ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) (A) 0Tc=25“( 'cBO ^C 8 'ces ^C E (UA) (V> (UA) Max Max MPS3563 30 12 2

MPS3709

Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646

2N3694

Abstract: 2N5219 2N5127 2N5131 2N5132 2N5227 MPS-A05 MPS-A06 MPS-A10 MPS-A20
Contextual Info: Econoline Plastic-Molded Silicon SEPT” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package EBC Pinning D-C C U R R E N T GAIN >- Typ e No. cc < o CL Pd (hFE ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C CBO CEO EBO VcE lc