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    711002T Search Results

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    2222 kn a

    Abstract: 175B BLF277 c17f
    Text: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability


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    PDF T-37-Ã BLF277 711002b OT119 2222 kn a 175B BLF277 c17f

    M2404

    Abstract: BT138F triac 134 M3403 triac bt138f
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g


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    PDF 711002b L22R5 BT138F OT-186 BT138F- M2404 triac 134 M3403 triac bt138f

    PZT2907

    Abstract: PZT2907A
    Text: 711002t. DDbTTbS IPHIN PZT2907 PZT2907A SILICON PLANAR EPITAXIAL TRANSISTORS PNP m edium pow er transistors in a m icro m in ia tu re SMD envelope SO T-223 . Designed p rim a rily fo r high-speed sw itching and d rive r applications. ~ v CB0 m ax. 60 V 40 V


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    PDF 711002t. PZT2907 PZT2907A OT-223) PZT2907A

    TIP135

    Abstract: TIP136 TA76 TIP130 TIP131 TIP132 TIP137
    Text: TIP135 TIP136 TIP137 PHILIPS INTERNATIONAL SbE D • 711002t. 00L<35aa Tbl T -3 3 ■ P H IN 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130


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    PDF TIP135 TIP136 TIP137 7110fleti O-220AB TIP130 TIP131 TIP132. tip136 TA76 TIP132 TIP137

    BF994S marking code

    Abstract: BF994S MOSFET Tetrode
    Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and


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    PDF BF994S 711002b 00341117b OT143 BF994S marking code BF994S MOSFET Tetrode

    BT153

    Abstract: Thyristor TAG TI-1153 TAG thyristor TI1153 thyristor TAG 13 philips thyristor 239
    Text: PHILIPS INTERNATIONAL SflE ]> • 711002t. 00S3Q35 301 * P H I N Bl 1b3 y v._ FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a T 0-220A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator,


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    PDF 711002t. 00S3Q35 T0-220AB. 711Dfl2ti BT153 7Z82059 BT153 Thyristor TAG TI-1153 TAG thyristor TI1153 thyristor TAG 13 philips thyristor 239

    TIP47

    Abstract: TIP-47 TIP48 TIP49 TIP50 d0312
    Text: PHILIPS INTERNATIONAL 4SE D E3 711002t. G0312M5 b E3PHIN 11 TIP47; TIP48 jI TIP49; TIP50 T-33-K ~ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-22 0 envelope for amplifier and switching applications.


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    PDF 711002t. D0312MS TIP47; TIP48 TIP49; TIP50 T0-220 TIP47 O-220AB, riP47^ TIP-47 TIP49 TIP50 d0312

    BLV36

    Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
    Text: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or


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    PDF 711002t. BLV36 BLV36 TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36

    BFQ42

    Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
    Text: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power


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    PDF 711002t. BLW29 BFQ42 7Z77686 7Z77587 SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke

    BDT95

    Abstract: bdt93
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.


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    PDF BDT91 BDT93 BDT95 711002t, 711005b 0QM33E7 BDT95

    BFR93

    Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
    Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low


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    PDF 711005t BFR93 ON4186) BFT93. 711002b BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47

    transistor cq 529

    Abstract: BLV94 sot-171 transistor zx series
    Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.


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    PDF BLV94 711DfiEb 00b3Dbà transistor cq 529 BLV94 sot-171 transistor zx series

    Biphase mark code

    Abstract: PC74HC126 biphase SAA7274 D73D DDA0725 SAA7274P SAA7274T
    Text: INTERIC SAA7274 SOUND AUDIO DIGITAL INPUT CIRCUIT ADIC G E N E R A L DESCRIPTIO N T he S A A 7 2 7 4 is an A u d io Digital In p u t C ircu it (A D IC ) w hich converts digital audio signals in accordance w ith th e IEC /E BU standards, IEC tech. com. No. 84, seer. 50, Jan. 1987 in to an equivalent


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    PDF SAA7274 SAA7274 Biphase mark code PC74HC126 biphase D73D DDA0725 SAA7274P SAA7274T

    TDA8709

    Abstract: IEC134 S028 TDA8709T fdk id
    Text: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing


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    PDF T-77-07-IZ TDA8709 7110fl2b 0037DT3 TDA8709 711Qfl5b D03710b IEC134 S028 TDA8709T fdk id

    P435M

    Abstract: BGY47A
    Text: BGY47A _ UHF POWER AMPLIFIER MODULE A broadband UHF am plifier module prim arily designed fo r mobile communications equipment, operating directly from 7.5 V o r 9.6 V electrical systems. The module w ill produce a m inim um ou tput of 2.0 W or 3.2 W in to a 50 £2 load over the frequency range 400 to 470 MHz.


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    PDF BGY47A OT181 711Dfl2b DD7417Ã P435M BGY47A

    Diagram IC Lm 2476

    Abstract: 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179C PCF1179CT PCF1179CU
    Text: PHILIPS INTERNATIONAL b4E » • 711032^ 0057300 7^5 « P H I N P hilip s Sem P roduct specification 4-digit duplex LCD car clock PCF1179C FEATURES GENERAL DESCRIPTION • Internal voltage regulator is electrically programmable


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    PDF 711032b 05730A PCF1179C 12-hour 24-hour 28-lead PCF1179C 711002t) Diagram IC Lm 2476 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179CT PCF1179CU

    TDA1011

    Abstract: audio preamplifier circuit diagram TDA audio power amplifier tda POWER AMPLIFIER tda power amplifier circuit diagram r2km
    Text: TDA1011 JV _ 2 TO 6 W AUDIO POWER AMPLIFIER The TD A 1011 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line SIL plastic package. The device is especially designed for portable radio and recorder applications and delivers up


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    PDF TDA1011 TDA1011 711DAEL 60T37 audio preamplifier circuit diagram TDA audio power amplifier tda POWER AMPLIFIER tda power amplifier circuit diagram r2km

    black 6 pin chip

    Abstract: SDIP32 TDA9170 CJAu
    Text: INTEGRATED CIRCUITS TDA9170 YU V picture improvement processor based on histogram modification Preliminary specification File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS V jP 711032b I D07fl220 OTS • Philips Semiconductors


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    PDF TDA9170 711002b D07fl220 TDA9170 black 6 pin chip SDIP32 CJAu

    BFQ10

    Abstract: 718s
    Text: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended


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    PDF 711005b DD2b21S BFQ10 T-27-27 BFQ10 718s

    DT139

    Abstract: DT139F M1632 BT139F M1628 gate control circuits for bt139 for heating applications
    Text: PHILIPS INTERN A T I O N A L bSE T> m 7110âE?b OObSBlfi Tôt. B I PHI N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking


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    PDF BT139F OT-186 BT139F- OT-186 DT139 DT139F M1632 M1628 gate control circuits for bt139 for heating applications

    P3Q22V10-7A

    Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
    Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES


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    PDF 711DflEb P3Q22V10â P3Q22V10-7 100mA 24-Pin P3Q22V10-7N 0410D P3Q22V10-7A 0401F P3Q22V10-7D Pal programming 22v10

    M1434

    Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
    Text: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no


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    PDF BTV58 T0-220AB BTV58â 1000R 711005b 00S30TM M1434 Gate Turn-Off Thyristors LS025 BTV58-600R 600R CG10A 1000R

    OM976

    Abstract: 0071547 philips hybrid OM976
    Text: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance


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    PDF 7110a2fc. OM976/1 OM976/1 OM976 0071547 philips hybrid OM976

    P83C524

    Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
    Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES


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    PDF L1343 P83C524 P83C524 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP