MOTOROLA TRANSISTOR 0063 Search Results

un5313

Abstract: 5311DW
Contextual Info: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 S ER IES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

Contextual Info: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682

MHQ6100

Abstract: IC AL 6001
Contextual Info: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON

SN45 diode

Abstract: motorola diode 739 15n45 MTM15N45 MTM15N35 mtm15n50 SN45
Contextual Info: MOTOROLA SC IME D I t.3b?SSM OQTQOÖQ â | XSTRS/R F 'T - 3 T - / S ' MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM15N45 MTM15N50 Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 15 AMPERES

DIODE MOTOROLA 633

Abstract: NS 8002 1151 MQ6002I
Contextual Info: MOTOROLA SC XSTRS/R F *4bE D b3b?2S4 OO T E Mb B 1 I MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products Power Field-Effect Transistor DM0 mini N-Channel Enhancement-Mode Silicon Gate TM OS, with Current Sensing Capability MHR35N06M Suffixes:

tp5n40

Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Contextual Info: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs

Contextual Info: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed

2n5642

Abstract: 2N5642 motorola 2N5642 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •

Motorola transistor 388 TO-204AA

Contextual Info: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed

MOTOROLA N-Channel MOSFET 3-334

Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150
Contextual Info: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

Contextual Info: MOTOROLA I SEMICONDUCTOR BUS50 TECHNICAL DATA 70 AMPERES NPN SIUCON POWER TRANSISTOR SWITCHMODE SERIES NPN SIUCON POWER TRANSISTORS 125 VO LTS BVCEO 350 W ATTS 200 V (BVCES) The B U S 5 0 transistor is designed for low voltage, high-speed, pow er sw itching in inductive circuits where fall time is critical. It is particularly

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

MM3227

Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?55M 00*î24«î b S ■ f l O T b SEM ICONDUCTOR TECHNICAL DATA MM3227 Suffixes: Discrete M ilitary Products D m NPN Silicon Sm all-Signal Transistor H, HX //I//// . . . d esig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap p licatio n s

DM 0265 R pin EQUIVALENT

Abstract: MRF2005 724 motorola NPN Transistor
Contextual Info: lEE D I MOTOROLA fc.3L.72SM 0 0 0 0 0 4 0 MOTOROLA SC T-33-0? fi | XSTRS/R F SEMICONDUCTOR TECHNICAL DATA MRF2005M The RF Line S .O W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER TR A N S IS T O R . . . designed fo r Class B and C co m m o n b ase broadband am p lifie r

IR 92 0151

Abstract: MM5680 to204ae
Contextual Info: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications

Motorola transistor 388 TO-204AA

Abstract: motorola mosfet BD357 Bd 357
Contextual Info: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M

Contextual Info: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost

Motorola 2N6083

Abstract: 2N6083
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6083 The RF Line 30 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N IMPN SILIC O N RF POWER T R A N SIS T O R S . . . designed for 12.5 V o lt V H F large-signal amplifier applications required in commercial and industrial equipment operating to

40N20

Contextual Info: MO TO R O L A SC X ST RS /R F MOTOROLA bfiE D b 3 b ? B 5 4 DOTflbOfl ET3 • SEMICONDUCTOR ■ TECHNICAL DATA Designer's Data Sheet MTM40N20 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FET 40 A M P E R E S

MRF234

Abstract: lb940 MRF-234
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF234 T h e R F Line 25 W - 9 0 M H z RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed for 12.5 V o lt, mid-band large-signal am plifier app li­ cations in industrial and com m ercial F M equipm ent operating in the

sm 0038 ir receiver

Abstract: MCR 106-8 transistor washing machine ladder diagram diagram rice cooker sharp keypad 4x4 scanning ir sensor sm 0038 TRANSISTOR mcr 100-6 Lm324 window comparator motorola organ circuit motorola mc6805 development board
Contextual Info: MOTOROLA m Order this document as AN-HK-22/H SEMICONDUCTOR APPLICATION NOTE MC68HC05SR3 MC68HC705SR3 Design Notes This document contains information on products under development. Motorola reserves the right to change or discontinue these products without notice.

Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3b?2SM 00flS2fc,l T | 7=3S~29 r - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M J D 112 PNP M J D 117 Com plem entary Darlington Pow er Transistors D P A K For Surface M ount Applications Designed for general purpose power and switching such as output or driver

2N6377

Abstract: 2N6378 2N6379 2N637
Contextual Info: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.