un5313
Abstract: 5311DW
Text: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 S ER IES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1/D
MUN5311DW1T1
OT-363
un5313
5311DW
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682
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b3b72
MM5682
MIL-S-19500/xxx
O-116)
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MHQ6100
Abstract: IC AL 6001
Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON
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MHQ6100A
MIL-S-19500/xxx
O-116)
MHQ6100
IC AL 6001
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SN45 diode
Abstract: motorola diode 739 15n45 MTM15N45 MTM15N35 mtm15n50 SN45
Text: MOTOROLA SC IME D I t.3b?SSM OQTQOÖQ â | XSTRS/R F 'T - 3 T - / S ' MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM15N45 MTM15N50 Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 15 AMPERES
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97A-02
O-204AE
SN45 diode
motorola diode 739
15n45
MTM15N45
MTM15N35
mtm15n50
SN45
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DIODE MOTOROLA 633
Abstract: NS 8002 1151 MQ6002I
Text: MOTOROLA SC XSTRS/R F *4bE D b3b?2S4 OO T E Mb B 1 I MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products Power Field-Effect Transistor DM0 mini N-Channel Enhancement-Mode Silicon Gate TM OS, with Current Sensing Capability MHR35N06M Suffixes:
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MHR35N06M
MIL-S-19500/547
O-116)
DIODE MOTOROLA 633
NS 8002 1151
MQ6002I
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tp5n40
Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs
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b3b725H
O-204AA)
97A-01
97A-03
-fUO-30(
97A-03
O-204AE)
tp5n40
Motorola transistor 388 TO-204AA
TIC 160 D
M30TR
TP5N40E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed
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IRF440
97A-01
97A-03
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2n5642
Abstract: 2N5642 motorola 2N5642 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •
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2N5642
2n5642
2N5642 motorola
2N5642 equivalent
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Motorola transistor 388 TO-204AA
Abstract: No abstract text available
Text: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed
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IRF350
O-204AA)
97A-01
97A-03
O-204AE)
Motorola transistor 388 TO-204AA
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MOTOROLA N-Channel MOSFET 3-334
Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150
Text: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S
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3b7254
MTH20N15
MTM20N15
to-218ac
MOTOROLA N-Channel MOSFET 3-334
3-336 motorola
YI45M
RF1MB
Case 197A-02
VDE 0660
AN569
MTM20N15
S150
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MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
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b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
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Untitled
Abstract: No abstract text available
Text: MOTOROLA I SEMICONDUCTOR BUS50 TECHNICAL DATA 70 AMPERES NPN SIUCON POWER TRANSISTOR SWITCHMODE SERIES NPN SIUCON POWER TRANSISTORS 125 VO LTS BVCEO 350 W ATTS 200 V (BVCES) The B U S 5 0 transistor is designed for low voltage, high-speed, pow er sw itching in inductive circuits where fall time is critical. It is particularly
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BUS50
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MM3227
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?55M 00*î24«î b S ■ f l O T b SEM ICONDUCTOR TECHNICAL DATA MM3227 Suffixes: Discrete M ilitary Products D m NPN Silicon Sm all-Signal Transistor H, HX //I//// . . . d esig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap p licatio n s
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MM3227
MIL-S-19500/317
O-116)
MM3227
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DM 0265 R pin EQUIVALENT
Abstract: MRF2005 724 motorola NPN Transistor
Text: lEE D I MOTOROLA fc.3L.72SM 0 0 0 0 0 4 0 MOTOROLA SC T-33-0? fi | XSTRS/R F SEMICONDUCTOR TECHNICAL DATA MRF2005M The RF Line S .O W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER TR A N S IS T O R . . . designed fo r Class B and C co m m o n b ase broadband am p lifie r
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T-33-0?
MRF2005M
b3b7254
DM 0265 R pin EQUIVALENT
MRF2005
724 motorola NPN Transistor
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IR 92 0151
Abstract: MM5680 to204ae
Text: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications
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MM5680
MIL-S-19500/xxx
O-116)
IR 92 0151
MM5680
to204ae
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Motorola transistor 388 TO-204AA
Abstract: motorola mosfet BD357 Bd 357
Text: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M
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110Tb
MTM25IM10
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
Motorola transistor 388 TO-204AA
motorola mosfet
BD357
Bd 357
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Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost
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AN415A)
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Motorola 2N6083
Abstract: 2N6083
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6083 The RF Line 30 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N IMPN SILIC O N RF POWER T R A N SIS T O R S . . . designed for 12.5 V o lt V H F large-signal amplifier applications required in commercial and industrial equipment operating to
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2N6083
Motorola 2N6083
2N6083
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40N20
Abstract: No abstract text available
Text: MO TO R O L A SC X ST RS /R F MOTOROLA bfiE D b 3 b ? B 5 4 DOTflbOfl ET3 • SEMICONDUCTOR ■ TECHNICAL DATA Designer's Data Sheet MTM40N20 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FET 40 A M P E R E S
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MTM40N20
O-204
97A-01
97A-03
40N20
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MRF234
Abstract: lb940 MRF-234
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF234 T h e R F Line 25 W - 9 0 M H z RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed for 12.5 V o lt, mid-band large-signal am plifier app li cations in industrial and com m ercial F M equipm ent operating in the
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MRF234
MRF234
lb940
MRF-234
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sm 0038 ir receiver
Abstract: MCR 106-8 transistor washing machine ladder diagram diagram rice cooker sharp keypad 4x4 scanning ir sensor sm 0038 TRANSISTOR mcr 100-6 Lm324 window comparator motorola organ circuit motorola mc6805 development board
Text: MOTOROLA m Order this document as AN-HK-22/H SEMICONDUCTOR APPLICATION NOTE MC68HC05SR3 MC68HC705SR3 Design Notes This document contains information on products under development. Motorola reserves the right to change or discontinue these products without notice.
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AN-HK-22/H
MC68HC05SR3
MC68HC705SR3
AN-HK-22/H
sm 0038 ir receiver
MCR 106-8 transistor
washing machine ladder diagram
diagram rice cooker sharp
keypad 4x4 scanning
ir sensor sm 0038
TRANSISTOR mcr 100-6
Lm324 window comparator
motorola organ circuit
motorola mc6805 development board
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Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F 12E D | b3b?2SM 00flS2fc,l T | 7=3S~29 r - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M J D 112 PNP M J D 117 Com plem entary Darlington Pow er Transistors D P A K For Surface M ount Applications Designed for general purpose power and switching such as output or driver
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00flS2fc
forTIP110-TIP117
MJD112
MJD117
00flS5bt.
MJD112
MJD117
T-33-21
MJD112-1)
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2N6377
Abstract: 2N6378 2N6379 2N637
Text: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.
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aG04b3b
2N6377
2N6379
2N6378
25/is
2N6274-77
2N6377
2N6378
2N6379
2N637
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