2N6116
Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Text: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes
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b3b7255
2N6116
2N6117
2N6118
2n6116 motorola
Unijunction
motorola programmable unijunction
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4C6 toroid
Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET
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b3b72SH
TP1940
20Bias
4C6 toroid
UNELCO
TP1940
108 motorola transistor
4C6 ferrite
iWatt
FERRITE TOROID
dss125
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7805 smd
Abstract: SMD transistor Mo 7805 voltage regulator IC voltage regulator 7805 7805 regulator smd transistor smd 2b SMD 7805 REGULATOR IC 7805 SMD motorola rf Power Transistor amplifier 3HH
Text: M O T O R O L A SC 4bE D X ST RS /R F • b3b7254 DG^SEEl MOTOROLA " 3 HriOTb 7^ 3 5 ~C ß SEM IC O N D U C T O R TECHNICAL DATA TP303T The RF Line U H F P o w e r T ra n sisto r The TP3031 is designed for 960 MHz base stations in both analog and digital applica
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b3b7254
TP3031
TP3031
T-33-09
7805 smd
SMD transistor Mo
7805 voltage regulator IC
voltage regulator 7805
7805 regulator smd
transistor smd 2b
SMD 7805
REGULATOR IC 7805 SMD
motorola rf Power Transistor
amplifier 3HH
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J0350
Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM
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b3b725M
-R53-OI
FTE801
J03501
J03SQ2
PTE801
JO3501
JO3502
J03502
J0350
J03501
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MOTOROLA POWER TRANSISTOR
Abstract: TP2033 motorola rf Power Transistor TRANSISTOR A 225
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b7254 00*15172 5 « n O T b 'T-33 -'Oa\ MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA TP2033 Advance Inform ation The RF Line V H F P o w e r T ran sisto r 30 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2033 has been specifically designed and characterized fo r 12.5 V operation in
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b3b7254
TP2033
TP2033
145D-01,
Va2033
T-33-09
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
TRANSISTOR A 225
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1620CTR
Abstract: common anode MUR diodes 1610CTR MUR1610CTR MUR1620CTR diode 160a motorola 221A-06 MUR1605CT MUR1605CTR MUR1615CTR
Text: MOTOROLA fciME » • SEMICONDUCTOR TECHNICAL DATA b3b725S OOflbM'ib TbS ■MOT? MOTOROLA SC DIODES/OPTO M UR1605CTR M UR1610CTR M UR1615CTR M UR1620CTR S w itch m o d e Dual Ultrafast Power Rectifiers . . . designed for use in negative switching po w er supplies, inverters and as free w h e e l
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b3b725S
MUR1605CTR
MUR1610CTR
MUR1615CTR
MUR1620CTR
15CTC
MUR1605CTR,
MUR1610CTR,
MUR1615CTR,
1620CTR
common anode MUR diodes
1610CTR
MUR1620CTR
diode 160a motorola
221A-06
MUR1605CT
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MD6003
Abstract: MD6003F MD6001
Text: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous
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b3b7254
MD6001
MD6003
MD6002
MD6003F
M06001
MD6001,
MD6002,
MD6003,
MQ6001
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mpf4861a
Abstract: MPF4860 MPF4859A MPF4857A 2n4856 transistor F4859A MPF4859 mpf4861
Text: MOTOROL A SC 15E 0 I b3b7254 GGflb?^ 1 XSTRS/R F T-SS-2S' MPF4856, A thru MPF4861, A CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Rating MPF4856.A MPF4859.A MPF4857.A MPF4860.A MPF48S8,A MPF4861.A Unit Drain-Source Voltage VDS +40
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b3b7254
MPF4856,
MPF4861,
O-226AA)
MPF4856
MPF4859
MPF4857
MPF4860
MPF48S8
MPF4861
mpf4861a
MPF4859A
MPF4857A
2n4856 transistor
F4859A
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MCM84000AS60
Abstract: No abstract text available
Text: MOTOROLA SC M E H O R Y / A S I C M OTOROLA h S 1E ]> b3b7251 0003571 175 SEM ICO ND U C TO R • ■ TECHNICAL DATA MCM84000A MCM8L4000A Advance Information 4Mx8 Bit Dynamic Random A ccess Memory Module The M C M 8 4 0 0 0 A S is a 32M, dynam ic random a cc e ss memory (DRAM )
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b3b7251
30-lead
4000A
8L4000A
MCM84000AS60
MCM84000AS70
MCM84000AS80
MCM84000AS10
MCM8L4000AS60
MCM8L4000AS70
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MC34050 "cross reference"
Abstract: MC34051 cross reference MC26LS32 AM26LS30 CROSS REFERENCE AM26L532 Am26LS32 "cross reference" MC75176 eia 232 quad line driver P646L MC75107
Text: ' MOTOROLA SC TELECOM 4bE D WÊ b3b72S3 Q QÔ 3 S 2 Q S MM0T5 Line Drivers General Purpose Output Current tprop Delay Capa» Time billty Max (ns) (mA) 15 15 S = Single Ended D = Differ ential Party Line Opera tion D Strobe or Enable 1/ 1/ 1/ l/ 1/ 1/
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b3b72S3
P/648
L/620
P/646
L/632
MC3450
MC3452
MC75107
MC75108
MC3453
MC34050 "cross reference"
MC34051 cross reference
MC26LS32
AM26LS30 CROSS REFERENCE
AM26L532
Am26LS32 "cross reference"
MC75176
eia 232 quad line driver
P646L
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Untitled
Abstract: No abstract text available
Text: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.
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b3b72S4
P33-3
2C6052HV
2C6059HW
Rang1000
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chip die npn transistor
Abstract: No abstract text available
Text: 4bE D b3b7254 OQTSTSl M OT OR OL A 3 • HOTbT-31 XSTRS/R sc F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C3439HV Chip NPN Silicon Small-Signal Transistor DM0 m ini Discrete Military Operation . .designed for high-voltage, high-current applications in switching and amplifier service.
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b3b7254
HOTbT-31
2C3439HV
chip die npn transistor
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Untitled
Abstract: No abstract text available
Text: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade
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b3b72S4
2C6193HV
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2N5945
Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
Text: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*
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b3b7254
2N5944
2N5945
2N5946
VK200
20/4B
56-590-65-3B
2N5946 MOTOROLA
2N5946
2N5945 Motorola
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2N6432
Abstract: 2N6432 MOTOROLA 2N6433
Text: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage
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b3b725M
2N6432
2N6433
O-206AA)
2N6433
2N3743
2N6432 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,
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b3b72S5
2N51681
CR6200
S6210
MCR6200,
S6210,
S6220
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MJ10016HX
Abstract: No abstract text available
Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall
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b3b72S4
MJ10016HX,
MJ10016HX
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bd529
Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
Text: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S
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b3b72S4
BD525
BD527
BD529
BD526,
BD528,
BD530
B0525.
BD525-1.
bd529
transistors bd525
BD530
B0525
BD525-1
BD525-5
BD526
BD528
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MTM12N10
Abstract: 221A-06 25CC MTP12N10E
Text: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device
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b3b72S4
MTM12N10
MTP12N10E
MTM12N10,
MTM12N10
221A-06
25CC
MTP12N10E
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Microlab FXR
Abstract: BF431L MRF9011 MRF9011L SF-31N microlab tuner SF
Text: MOTOROLA SC XSTRS/R F MbE D • b3b7254 DORSOb'i 1 ■ N O T b MOTOROLA T - 'S H l ■ I SE M IC O N D U C T O R TECHNICAL DATA M RF 9011L BF431L* The RF Line N P N S ilic o n H igh -F re q u e n cy T ra n sisto r 'E u ro p e an Part Num ber . designed primarily for use in high-gain, low-noise small-signal amplifiers for
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b3b7254
T-51-H
OT-143
3ISA-05,
Microlab FXR
BF431L
MRF9011
MRF9011L
SF-31N
microlab tuner SF
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PDF
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MCR68
Abstract: MCR69-1 motorola MCR69-2
Text: MOTOROLA SC DIODES/OPTO 31E I> 13 b3b72SS 0002040 2 ElflO T? M CR 68 Series M CR 69 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability
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b3b72SS
MCR68)
MCR69)
MCR68
MCR69
MCR69-1
motorola MCR69-2
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PDF
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XC56200LC10
Abstract: XC56002FC66 56002FC66 56166FE60 56156FE60 2x256 DSP56001-RC20 SP56001FE20 XC56004FJ40
Text: MOTOROLA SC UC/UP bflE D • b3b724ê D12DM2Ö 2Mb ■ MOTI DSP PRODUCT Part MOQ Status Package Pin Speed Program ROM/RAM Data ROM/RAM Peripherals Comments DSP56100 Family General Purpose 16-Bit Fixed Point X C 56156FE40 36 S CQFP 112 4 0 MHz 64/2048 0/2048
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b3b724ê
D12DM2Ö
DSP56100
16-Bit
56156FE40
56156FE60
56166FE60
XC56200LC10
XC56002FC66
56002FC66
2x256
DSP56001-RC20
SP56001FE20
XC56004FJ40
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motorola 2N4427
Abstract: 2N4427 MOTOROLA 2N4427 parameters SILICON DICE motorola MRF207
Text: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA SC 34 I>F|b3b72SS 0D3Û0S3 1 DIODES/OPTO 34C 38053 D T~ 3 h 9 3 SILICON RF TRANSISTOR DICE (continued) 2C4427 DIE NO. — NPN LINE SOURCE — RF502.161 This die provides performance equal to or better than that of
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b3b72SS
RF502
2C4427
2N4427
MRF207
motorola 2N4427
2N4427 MOTOROLA
2N4427 parameters
SILICON DICE motorola
MRF207
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PDF
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L285
Abstract: No abstract text available
Text: MOTORCLA SC 1HE 0 § b3b7254 QOfiSMI? S | XSTRS/R F T ^ 3 3 -i> 7 MOTOROLA * SEMICONDUCTOR MPS-UIO TECHNICAL DATA NPN SILICON HIGH V O L T A G E A M P L IF IE R T R A N SIS TO R 4l NPN SILICON A N N U L A R T R A N SIS T O R . . . designed for high-voltage video and luminance output stages in
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b3b7254
L285
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