MTW7N80E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM
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O-247
MTW7N80E
MTW7N80E/D*
MTW7N80E
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AN569
Abstract: MTP4N80E MTP4N80
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
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MTP4N80E/D
MTP4N80E
MTP4N80E/D*
AN569
MTP4N80E
MTP4N80
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AN569
Abstract: MTP4N80E
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
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MTP4N80E/D
MTP4N80E
MTP4N80E/D*
AN569
MTP4N80E
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mosfet transistor 400 volts.100 amperes
Abstract: mtp2p
Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate
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MTP2P50E/D
MTP2P50E
MTP2P50E/D
mosfet transistor 400 volts.100 amperes
mtp2p
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AN569
Abstract: MTP2P50E
Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate
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MTP2P50E/D
MTP2P50E
AN569
MTP2P50E
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motorola MOSFET 935
Abstract: pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935
Text: MOTOROLA Order this document by MTU18N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU18N50E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 18 AMPERES 500 VOLTS RDS on = 0.31 OHM This high voltage MOSFET uses an advanced termination
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MTU18N50E/D
MTU18N50E
motorola MOSFET 935
pd 223
AN569
MTU18N50E
MOTOROLA TRANSISTOR 935
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E1
418C
AN569
MTB4N80E1
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E1
418C
AN569
MTB4N80E1
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AN569
Abstract: MTY20N50E
Text: MOTOROLA Order this document by MTY20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY20N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS
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MTY20N50E/D
MTY20N50E
MTY20N50E/D*
AN569
MTY20N50E
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mtw14n50
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW14N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW14N50E Motorola Preferred Device TMOS POWER FET 14 AMPERES 500 VOLTS RDS on = 0.40 OHM
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MTW14N50E/D
O-247
MTW14N50E
MTW14N50E/D*
TransistorMTW14N50E/D
mtw14n50
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AN569
Abstract: MTY16N80E
Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS
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MTY16N80E
MTY16N80E/D*
AN569
MTY16N80E
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AN569
Abstract: MTY14N100E 340G
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS
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MTY14N100E/D
MTY14N100E
MTY14N100E/D*
AN569
MTY14N100E
340G
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S 170 MOSFET TRANSISTOR
Abstract: MTW20N50E-D TO-247 Package
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM
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MTW20N50E/D
O-247
MTW20N50E
MTW20N50E/D*
TransistorMTW20N50E/D
S 170 MOSFET TRANSISTOR
MTW20N50E-D
TO-247 Package
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S 170 MOSFET TRANSISTOR
Abstract: TB-547 TO247 package
Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM
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MTW6N100E/D
O-247
MTW6N100E
MTW6N100E/D*
TransistorMTW6N100E/D
S 170 MOSFET TRANSISTOR
TB-547
TO247 package
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MTB8N50E
Abstract: MTB8N50E-D
Text: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = 0.8 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB8N50E/D
MTB8N50E
MTB8N50E
MTB8N50E-D
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AN569
Abstract: MTY10N100E transistor 667 7A
Text: MOTOROLA Order this document by MTY10N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 1000 VOLTS
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MTY10N100E/D
MTY10N100E
MTY10N100E/D*
AN569
MTY10N100E
transistor 667 7A
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silicon carbide
Abstract: No abstract text available
Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A D K K K F E2 G2 U E2 C1 J G1 E1 C2E1 H Z AB EB UU H U AA Q Q P G N S - NUTS (3 TYP) T - (4 TYP) W V
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QJD1210007
Amperes/1200
silicon carbide
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MTB4N80E
Abstract: AN569 SMD310 824 mosfet
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E
MTB4N80E/D*
MTB4N80E
AN569
SMD310
824 mosfet
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motorola an569 thermal
Abstract: mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E/D
MTB4N80E/D*
motorola an569 thermal
mosfet transistor 400 volts.100 amperes
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motorola 549 diode
Abstract: diode Fr 10e AN569 MTB75N05HD
Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate
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MTB75N05HD/D
MTB75N05HD
motorola 549 diode
diode Fr 10e
AN569
MTB75N05HD
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MTP1N100E
Abstract: AN569
Text: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS
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MTP1N100E/D
MTP1N100E
MTP1N100E/D*
MTP1N100E
AN569
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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transistor 667 7A
Abstract: AN569 MTW10N100E
Text: MOTOROLA Order this document by MTW10N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW10N100E Motorola Preferred Device TMOS POWER FET 10 AMPERES 1000 VOLTS RDS on = 1.3 OHM
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MTW10N100E/D
O-247
MTW10N100E
MTW10N100E/D*
transistor 667 7A
AN569
MTW10N100E
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MTD1N80E
Abstract: AN569 SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM
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MTD1N80E
MTD1N80E/D*
MTD1N80E
AN569
SMD310
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