MOSFET TRANSISTOR 3400 Search Results

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

d1740

Abstract: NP55N04SUG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested

731 MOSFET

Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,40V IPA041N04NG DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,40V IPA041N04NG 1Description TO-220-FP Features •OptimizedtechnologyforDC/DCconverters

ATC100B3R3

Abstract: AN1955 MRF7S35120HSR3 Header MTTF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

J161 mosfet transistor

Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

MRF7S35015H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and

Contextual Info: Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 –30 V, –14 A, 7.0 mΩ Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

041N04N

Abstract: IPP041N04N IEC61249-2-21 JESD22 PG-TO220-3
Contextual Info: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mΩ • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications

041N04N

Abstract: PG-TO220-3 IPP041N04N JESD22
Contextual Info: IPP041N04N G Type IPB041N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 4.1 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications

IEC61249-2-21

Abstract: IPB015N04L JESD22 V8002
Contextual Info: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

Contextual Info: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

015N04L

Abstract: IPB015N04L IPB015N04L G JESD22
Contextual Info: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

038N04N

Abstract: JESD22
Contextual Info: Type IPD038N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.8 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level

Contextual Info: IPP041N04N G Type IPB041N04N G  3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 4.1 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications

DALE NTHS-1206N02

Abstract: dale thermistor curve NTHS NTHS 1206n02 Thermistor NTC 400k 3 pin preset resistor 10k ic 4050 pin diagram P channel MOSFET 10A thermistor ntc r1 LTC4050 MBRM120T3
Contextual Info: Final Electrical Specifications LTC4050 Lithium-Ion Linear Battery Charger Controller with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4050-4.1/LTC4050-4.2 are complete stand-alone constant-current/constant-voltage linear charge controllers for lithium-ion Li-Ion batteries. Charge current is

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2

lc4050

Abstract: 3.7V Li-Ion battery charge controller with 5v g05, thermistor LT4050 dale thermistor curve NTHS LTC4050 dale 2k thermistor curve 196KT transistor BD 249 Thermistor 400k
Contextual Info: LTC4050 Lithium-Ion Linear Battery Charger with Thermistor Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Standalone Linear Charger Controller for 1-Cell Lithium-Ion Batteries Thermistor Interface for Battery Temperature