mosfet vgs 5v vds 100v
Abstract: No abstract text available
Text: SSD50N10-18D 43A , 100V , RDS ON 18mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD50N10-18D
O-252
O-252
16-Apr-2013
mosfet vgs 5v vds 100v
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SSD20N20-125D
Abstract: MosFET MOSFET N-CH 200V
Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD20N20-125D
O-252
O-252
13-Sep-2013
SSD20N20-125D
MosFET
MOSFET N-CH 200V
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SSD14N25-280D
Abstract: MosFET
Text: SSD14N25-280D 10.9A , 250V , RDS ON 280mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD14N25-280D
O-252
O-252
21-Mar-2013
SSD14N25-280D
MosFET
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PDF
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SSD20N10-130D
Abstract: MosFET
Text: SSD20N10-130D 17A , 90V , RDS ON 130mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD20N10-130D
O-252
O-252
15-Jun-2012
SSD20N10-130D
MosFET
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PDF
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SSD30N15-60D
Abstract: MosFET
Text: SSD30N15-60D 22A , 150V , RDS ON 69mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD30N15-60D
O-252
O-252
16-Apr-2013
SSD30N15-60D
MosFET
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PDF
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FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
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SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10Z
UTT6N10Z
OT-223
UTT6N10ZL-AA3-R
UTT6N10ZG-AA3-R
QW-R502-921,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10
UTT6N10
OT-223
UTT6N10L-AA3-R
UTT6N10G-AA3-R
UTT6N10L-AA3-at
QW-R502-779
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,
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NN30311A
NN30311A
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IRF9140
Abstract: FP0001 SFF9240J
Text: 5U&II /" '- \ l| PRELIMINARY SFF9240J - SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -11 AMP -200 VOLTS 0.50Q P-CHANNEL POWER MOSFET Designer’s Data Sheet
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670-SSDI
SFF9240J
IRF9140
O-257
-20RACTERISTIC
FP0001
SFF9240J
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IRFM7250
Abstract: 7734 driver krad 2E12 3E12 SFFD250M SFFR250M frf250
Text: PRELIMINARY SFFR250M SFFD250M SOLID STATE DEVICES, INC ':y/// / // 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: (714 670-SSDI (7734) Fax: (714) 522-7424 0.100 Q Designer’s Data Sheet RADIATION HARDENED N-CHANNEL MOSFET SFFR250M: 100KRad(Si) Gamma
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670-SSDI
SFFR250M
SFFD250M
IRFM7250/8450,
FRF250
O-254Z,
O-258,
O-259,
O-254
FR0001
IRFM7250
7734 driver
krad
2E12
3E12
SFFD250M
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PDF
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Untitled
Abstract: No abstract text available
Text: SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -11 AMP P-Channel POWER MOSFET DESIGNER’S DATA SHEET 1/ Part Number / Ordering Information
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SFF9130M
SFF9130Z
SFF9130
O-254
O-254Z
FP0025E
O-254
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PDF
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1SMQ
Abstract: SFF75N05M SFF75N05Z 1535s
Text: in-1 PRELIMINARY : -in ' SFF75N05M-SFF75N05Z1 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada.CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 75 AMP 50 VOLTS 15mQ N-CHANNEL MOSFET Designers: DataiSheefc FEATURES: • •
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SFF75N05Mâ
SFF75N05Z:
670-SSDI
1SMQ
SFF75N05M
SFF75N05Z
1535s
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201912B
Abstract: AAT4712 EDLC262020-501-2F50 EDLC152344 supercap balance
Text: DATA SHEET AAT4712 Power Path with Input Current Limit and Capacitor Charger General Description Features The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions.
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AAT4712
AAT4712
201912B
201912B
EDLC262020-501-2F50
EDLC152344
supercap balance
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Untitled
Abstract: No abstract text available
Text: SFF6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.86 AMP N-CHANNEL MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF6661
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SFF6661/39
SFF6661
FT0041B
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IXTH11N80
Abstract: No abstract text available
Text: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone : 714 670-SSDI (7734) Fax : (714) 522-7424 11 AMPS 800 VOLTS 0.95Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate
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670-SSDI
IXTH11N80
F00221
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AAT4712 Power Path with Input Current Limit and Capacitor Charger General Description Features The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions.
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AAT4712
AAT4712
01912A
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EDLC262020-501-2F50
Abstract: supercap balance
Text: DATA SHEET AAT4712 Power Path with Input Current Limit and Capacitor Charger General Description Features The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions.
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AAT4712
AAT4712
01912A
EDLC262020-501-2F50
supercap balance
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FT0041A
Abstract: TO-39 CASE 2N6661 idm3
Text: SFT6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.86 AMP N-CHANNEL MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT6661
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SFT6661/39
SFT6661
FT0041A
FT0041A
TO-39 CASE
2N6661
idm3
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2N6661
Abstract: No abstract text available
Text: SFF6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.86 AMP N-CHANNEL MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF6661
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SFF6661/39
SFF6661
FT0041B
2N6661
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SFF75N10M
Abstract: IXTH75N10 SFF75N10Z F00153G
Text: SFF75N10M SFF75N10Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 75 AMP N-CHANNEL POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SFF75N10M
SFF75N10Z
SFF75N10
O-254
O-254Z
Sup153G
SFF75N10M
IXTH75N10
SFF75N10Z
F00153G
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PDF
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EDLC152344-551-2F-30
Abstract: Super Capacitor Charger supercap charge AAT4712IRN-T1 YAGEO CHIP RESISTANCE 0603 EDLC152344 AAT4712 EDLC262020-501-2F50 EDLC262020 supercap balance
Text: PRODUCT DATASHEET AAT4712 SmartSwitchTM Power Path with Input Current Limit and Capacitor Charger General Description Features The AAT4712 is a programmed, current limited P-channel MOSFET power switch designed for high-side load-switching applications for SSD memory buffer saving solutions.
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AAT4712
AAT4712
EDLC152344-551-2F-30
Super Capacitor Charger
supercap charge
AAT4712IRN-T1
YAGEO CHIP RESISTANCE 0603
EDLC152344
EDLC262020-501-2F50
EDLC262020
supercap balance
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FR0013
Abstract: 2E12 3E12
Text: mi PRELIMINARY SFFR9160N SFFD9160P X',' SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -40 AMP -100 VOLTS 0.085 Q RADIATION HARDENED P-CHANNEL MOSFET Designer’s Data Sheet FEATURES:
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670-SSDI
FRK9160,
2N7328
FR0013
2E12
3E12
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