MOSFET J 114 Search Results

MOSFET J 114 Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET J 114 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFN170N10 Abstract: 170N10 125OC IXFK170N10 Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	PDF	IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125 Figure10. IXFN170N10 170N10 125OC IXFK170N10
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	PDF	IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125Â Figure10.
44N60 Abstract: 125OC Text: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C	Original	PDF	44N60 247TM O-264 125OC 44N60 125OC
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C	Original	PDF	44N60 247TM 125OC
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	PDF	26N90 25N90 25N90 247TM O-264
AP9563GH Abstract: P-Channel mosfet 40V ap9563gh AP9563GJ a12t Text: AP9563GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -40V RDS ON 40mΩ ID G ▼ RoHS Compliant BVDSS -26A S Description	Original	PDF	AP9563GH/J-HF O-252 AP9563GJ) 100us 100ms AP9563GH P-Channel mosfet 40V ap9563gh AP9563GJ a12t
Untitled Abstract: No abstract text available Text: AP9563GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 40m ID G -26A S Description G Advanced Power MOSFETs from APEC provide the	Original	PDF	AP9563GH/J O-252 AP9563GJ) O-251 100us 100ms
Untitled Abstract: No abstract text available Text: AP9563GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 40m ID G -26A RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the	Original	PDF	AP9563GH/J-HF O-252 AP9563GJ) 100us 100ms
AP9563GH Abstract: AP9563GJ a12t Text: AP9563GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -40V RDS ON 40mΩ ID G -26A S Description Advanced Power MOSFETs from APEC provide the	Original	PDF	AP9563GH/J O-252 AP9563GJ) O-251 100us 100ms AP9563GH AP9563GJ a12t
27n80q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C	Original	PDF	27N80Q 27N80Q 247TM O-264
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	PDF	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028
2N6756 JAN Abstract: 2N6755 Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.	OCR Scan	PDF	2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN
Untitled Abstract: No abstract text available Text: j Ordering number : ENN7005~] P-Channel Silicon MOSFET FTS1018 ISAf/YOl Load Switching Applications Features Package Dimensions • Low O N -resistance. • 4V drive. • M ounting height 1,1mm. unit : mm 2147A [FTS1018] 0.65 3.0 . 0.425 _ £ J Drain Source	OCR Scan	PDF	ENN7005~ FTS1018 FTS1018]
K1397 Abstract: Shindengen Electric Mfg LTD141 2SK1397 F40W25 Text: L V X v U - X M ° 7 - M 0 S F E T LVX Series Power MOSFET OUTLINE DIMENSIONS 2SK 1397 Case MTO-3P [F40W25] 5.0 ± 250V 40A • M l < 3.3 a a •A * * [Unit ! mm] a -j l - E # « » Date code Ciss) 1f[C tîD ;W 7 7 .B A *§ M Î)'!/J ^ tV a & E IA J No.	OCR Scan	PDF	2SK1397 F40W25] K1397 K1397 Shindengen Electric Mfg LTD141 2SK1397 F40W25

TO 505 Abstract: No abstract text available Text: I ^ S S S k ll PRELIMINARY àSPII SFF50N20M SFF50N20Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 J in 50 AMP"— 200 VOLTS 0.055 Q N-CHANNEL POWER MOSFET D esigner’s Data Sheet	OCR Scan	PDF	SFF50N20M SFF50N20Z 670-SSDI IXTH50N20 O-254 O-254Z 100-r TO 505
Untitled Abstract: No abstract text available Text: j ^ Y S ,X F K 3 N 3 0 IXFN 773N30 'reliminary Data VDSS = 300V lD25 HiPerFET Power MOSFET = 73A RDDS on S( , = 45mn t < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t TO-264 AA (1XFK) Test Conditions Maximum Ratings IXFK IXFN V DSS	OCR Scan	PDF	73N30 200ns O-264 15IXYS D-68623 IXFK73N30
Untitled Abstract: No abstract text available Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel	OCR Scan	PDF	180N10 180N10 247TM Cto150 O-264
2sk2673 Abstract: No abstract text available Text: H V X -n v 'J -X /t^-MOSFET H V X -n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : IT 0 -3 P 2SK2673 F P 5 W 9 0 H V X 2 5.5 ' 0-3 900v 5a 0.7 • «2 [Unit ’ mm] I R A TIN G S il A b s o lu te Maxim um R a tin g s 3J CJ pL ^ H Item (Tc=25°C )	OCR Scan	PDF	2SK2673 FP5W90HVX2) 2sk2673
Untitled Abstract: No abstract text available Text: IRFS254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	PDF	IRFS254
Untitled Abstract: No abstract text available Text: IRFP254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	PDF	IRFP254A
Untitled Abstract: No abstract text available Text: IRFW710S A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW710S
Untitled Abstract: No abstract text available Text: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	PDF	IRFP254
Untitled Abstract: No abstract text available Text: IRFS254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V	OCR Scan	PDF	IRFS254A
IXFN40N50 Abstract: No abstract text available Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25	OCR Scan	PDF	IXFN55N50 IXFN50N50 IXFK55N50 IXFK50N50 O-264 OT-227 IXFK55N50 IXFN55N50 BffW80N50 IXFN40N50

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MOSFET J 114 Search Results

MOSFET J 114 Result Highlights (5)

MOSFET J 114 Datasheets Context Search

IXFN170N10

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44N60

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AP9563GH

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AP9563GH

27n80q

TPCA*8064

2N6756 JAN

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K1397

TO 505

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2sk2673

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IXFN40N50