IRFW710S
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW710S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFW710S
IRFW710S
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IRFW710S
Abstract: No abstract text available
Text: IRFW710S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 3 .6 Î2 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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IRFW710S
IRFW710S
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Untitled
Abstract: No abstract text available
Text: IRFW710S A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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OCR Scan
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IRFW710S
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PDF
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IRFW710S
Abstract: No abstract text available
Text: IRFW710S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 3 .6 Î2 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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IRFW710S
IRFW710S
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW710S A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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OCR Scan
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IRFW710S
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PDF
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