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    MOSFET 7403 Search Results

    MOSFET 7403 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 7403 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SI4634DY-T1-E3

    Abstract: 74030 Si4634DY
    Text: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT


    Original     		Si4634DY Si4634DY-T1-E3 08-Apr-05 74030 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT


    Original     		Si4634DY Si4634DY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ) 21.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested


    Original     		Si7634BDP Si7634BDP-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4634DY

    Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 11-Mar-11 PDF

    si4634

    Abstract: si46
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4634 si46 PDF

    SI4634

    Abstract: Si4634DY-T1-GE3 SI4634DY-T1-E3 Si4634DY
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 18-Jul-08 SI4634 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4634DY Si4634DY-T1-E3 Si4634DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    0715

    Abstract: AN609 Si6466ADQ
    Text: Si6466ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6466ADQ AN609 29-Jun-07 0715 PDF

    A 1469 mosfet

    Abstract: AN609 Si6469DQ
    Text: Si6469DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6469DQ AN609 29-Jun-07 A 1469 mosfet PDF

    9585

    Abstract: AN609 Si6465DQ
    Text: Si6465DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6465DQ AN609 29-Jun-07 9585 PDF

    8650

    Abstract: AN609 Si6463BDQ 74036
    Text: Si6463BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6463BDQ AN609 29-Jun-07 8650 74036 PDF

    mosfet 4800

    Abstract: 4800 mosfet 74039 c 5171 AN609 Si6880AEDQ
    Text: Si6880AEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6880AEDQ AN609 02-Jul-07 mosfet 4800 4800 mosfet 74039 c 5171 PDF

    74032

    Abstract: AN609 Si6467BDQ 51171
    Text: Si6467BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6467BDQ AN609 29-Jun-07 74032 51171 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7662

    Abstract: No abstract text available
    Text: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested


    Original     		Si7662DP Si7662DP-T1-E3 18-Jul-08 Si7662 PDF

    SI7634BDP-T1-GE3

    Abstract: Si7634BDP Si7634BDP-T1-E3
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si7634BDP-T1-GE3

    Abstract: Si7634BDP Si7634BDP-T1-E3 7403-1 si7634 SI7634B
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 11-Mar-11 7403-1 si7634 SI7634B PDF

    Si7662

    Abstract: Si7662DP
    Text: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested


    Original     		Si7662DP Si7662DP-T1-E3 08-Apr-05 Si7662 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 11-Mar-11 PDF