SI6880AEDQ Search Results

Si6880AEDQ-T1-E3

Abstract: Si6880AEDQ Si6880EDQ
Contextual Info: Specification Comparison Vishay Siliconix Si6880AEDQ vs. Si6880EDQ Description: N-Channel, 1.8 V G-S Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6880AEDQ-T1 Replaces Si6880EDQ-T1 Si6880AEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6880EDQ-T1

Contextual Info: Si6880AEDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.018 at VGS = 4.5 V 7.2 0.022 at VGS = 2.5 V 6.5 0.025 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET • ESD Protected: 3500 V

Contextual Info: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V

Si6880AEDQ

Abstract: Si6880AEDQ-T1-E3
Contextual Info: Si6880AEDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.018 at VGS = 4.5 V 7.2 0.022 at VGS = 2.5 V 6.5 0.025 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET • ESD Protected: 3500 V

Si6880AEDQ

Abstract: battery spice model
Contextual Info: SPICE Device Model Si6880AEDQ Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6880AEDQ

Abstract: Si6880AEDQ-T1-E3
Contextual Info: Si6880AEDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.018 at VGS = 4.5 V 7.2 0.022 at VGS = 2.5 V 6.5 0.025 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET • ESD Protected: 3500 V

Si6880AEDQ

Contextual Info: Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3500 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.2 0.022 @ VGS = 2.5 V

Si6880EDQ

Abstract: Si6880AEDQ
Contextual Info: Specification Comparison Vishay Siliconix Si6880AEDQ vs. Si6880EDQ Description: N-Channel, 1.8-V G-S Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6880AEDQ-T1 Replaces Si6880EDQ-T1 Si6880AEDQ-T1—E3 (Lead Free version) Replaces Si6880EDQ-T1

mosfet 4800

Abstract: 4800 mosfet 74039 c 5171 AN609 Si6880AEDQ
Contextual Info: Si6880AEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT