SI6469DQ Search Results

A 1469 mosfet

Abstract: AN609 Si6469DQ
Contextual Info: Si6469DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6469DQ

Contextual Info: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6469DQ

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Si6469DQ

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Si6469DQ

Contextual Info: SPICE Device Model Si6469DQ Dual P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Si6469DQ

Contextual Info: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6469DQ

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 D 1 S 2 S 3 G 4 D Si6469DQ

Si6469DQ

Contextual Info: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT