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    MOSFET 500V 2A Search Results

    MOSFET 500V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H5N5001FM-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 5A 1.5Mohm To-220Fm Visit Renesas Electronics Corporation
    H5N5006DL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1832-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK2408-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 7A 900Mohm To-220Ab Visit Renesas Electronics Corporation

    MOSFET 500V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSS430

    Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70


    Original     		PDF JANSR2N7402 FSS430R4 R2N74 FSS430 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112

    Untitled

    Abstract: No abstract text available
    Text: RT8468A 500V Power MOSFET Integrated High Efficiency Constant Current LED Driver General Description Features The RT8468A integrates a 500V power MOSFET and a PWM controller. It is used for step-down converters by well controlling the internal MOSFET and regulating a


    Original     		PDF RT8468A 00V/1A RT8468A DS8468A-00

    2E12

    Abstract: 3E12 FSL430R4 JANSR2N7398
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7398 FSL430R4 2E12 3E12 FSL430R4 JANSR2N7398

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7398 FSL430R4

    JANSR2N7398

    Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7398 FSL430R4 JANSR2N7398 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7402 FSS430R4 2E12 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7402 FSS430R4

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 2N50K-TA Power MOSFET 2A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF 2N50K-TA 2N50K-TA QW-R205-031

    2N50

    Abstract: 547B
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N50 Preliminary Power MOSFET 2A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF O-220F O-252 QW-R502-547 2N50 547B

    Untitled

    Abstract: No abstract text available
    Text: RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF RDD022N50 SC-63) OT-428) 022N50 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF RDD023N50 SC-63) OT-428) 023N50 R1102A

    Untitled

    Abstract: No abstract text available
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: 3E12 FRS430D FRS430H FRS430R 794V
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 2E12 3E12 FRS430D FRS430H FRS430R 794V

    2E12

    Abstract: 3E12 FRM430D FRM430H FRM430R
    Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM430D, FRM430R, FRM430H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRM430D FRM430H FRM430R

    13N50

    Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and


    Original     		PDF 13N50 13N50 QW-R502-362 utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T

    STB4NC50

    Abstract: No abstract text available
    Text: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF STB4NC50 STB4NC50

    43721

    Abstract: No abstract text available
    Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL430R4 JANSR2N7398 MIL-STD-750, MIL-S-19500, 500ms; 43721

    Untitled

    Abstract: No abstract text available
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    VIVA

    Abstract: No abstract text available
    Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRS430D, FRS430R, FRS430H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 -257AA VIVA

    Untitled

    Abstract: No abstract text available
    Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRM430D, FRM430R, FRM430H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD desi45 O-204AA

    44i2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2


    OCR Scan     		PDF FS3UM-10 FS3UM-10 5711K2 44i2