power bjt advantages and disadvantages
Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
Text: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6015LVFR
O-264
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6011LVFR
O-264
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT12045L2VR
O-264
APT12045L2VR
|
PDF
|
APT10050LVR
Abstract: No abstract text available
Text: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT10050LVR
O-264
O-264
APT10050LVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT1201R5BVR
O-247
O-247
30TO-SOURCE
|
PDF
|
APT10086BVR
Abstract: No abstract text available
Text: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT10086BVR
O-247
O-247
APT10086BVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6030BVFR
O-247
O-247
|
PDF
|
APT50M80B2VFR
Abstract: ED 58A
Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M80B2VFR
Current031)
MIL-STD-750
APT50M80B2VFR
ED 58A
|
PDF
|
APT10M11LVR
Abstract: No abstract text available
Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT10M11LVR
O-264
O-264
APT10M1LVR
APT10M11LVR
|
PDF
|
APT1001RBVR
Abstract: No abstract text available
Text: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT1001RBVR
O-247
O-247
APT1001RBVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6011B2VFR
MIL-STD-750
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT10086SVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
|
Original
|
APT6015JVFR
E145592
OT-227
|
PDF
|
|
|
APT1201R6BVR
Abstract: No abstract text available
Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT1201R6BVR
O-247
O-247
APT1201R6BVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT1001R1AVR 1000V 9A 1.100W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT1001R1AVR
O-204AE)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6017WVR 600V 31.5A 0.170Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6017WVR
O-267
O-267
|
PDF
|
APT5010LVFR
Abstract: No abstract text available
Text: APT5010LVFR 47A 0.100Ω 500V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT5010LVFR
O-264
O-264
APT5010LVFR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT10057WVR 17.3A 0.570Ω 1000V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT10057WVR
O-267
O-267
|
PDF
|
apt5010
Abstract: No abstract text available
Text: APT5010JVRU2 44A 0.100Ω 500V POWER MOS V K S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT5010JVRU2
OT-227
E145592
apt5010
|
PDF
|
74 diode
Abstract: No abstract text available
Text: APT5026HVR 500V 18.5A 0.260Ω POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT5026HVR
O-258
O-258
74 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT5020SVFR 26A 0.200Ω 500V POWER MOS V FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT5020SVFR
Drain632)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6013JVR 40A 0.130Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT6013JVR
OT-227
E145592
|
PDF
|
SOT-227 Package
Abstract: l 7251 3.1
Text: APT60M80JVR 600V 55A 0.080W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT60M80JVR
OT-227
SOT-227 Package
l 7251 3.1
|
PDF
|
