Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS FET 1127 Search Results

    MOS FET 1127 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS FET 1127 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    induction cooker fault finding diagrams

    Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27L0001-0101 induction cooker fault finding diagrams induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design

    tda 8275

    Abstract: tda 8875 TDA 11136 IC tda 2001
    Text: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq2085-V1P3 SLUS598 bq29311 tda 8275 tda 8875 TDA 11136 IC tda 2001

    bq29311

    Abstract: tda 8275 103AT bq2085 bq2085-V1P3 VCELL12 tda 8875 Lithium-Ion Battery Charger 23-6
    Text: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq2085-V1P3 SLUS598 bq29311 16-Bit tda 8275 103AT bq2085 VCELL12 tda 8875 Lithium-Ion Battery Charger 23-6

    thermistor 91 ntc

    Abstract: 16 segment display pin configuration TDA 0200
    Text: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq2085-V1P3 SLUS598 bq29311 thermistor 91 ntc 16 segment display pin configuration TDA 0200

    BQ2083-V1P3

    Abstract: No abstract text available
    Text: bq2083-V1P3 www.ti.com SLVS508 − OCTOBER 2003 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D Drives 3-, 4-, or 5-Segment LED Display for D APPLICATIONS D Notebook PCs D Medical and Test Equipment


    Original     		PDF bq2083-V1P3 SLVS508 bq29311 38-Pin 16-Bit

    sm 4150

    Abstract: TDA 0200 voltage regulator IC TDA 0200 sp
    Text: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq2085-V1P3 SLUS598 bq29311 sm 4150 TDA 0200 voltage regulator IC TDA 0200 sp

    ecg semiconductors master replacement guide

    Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
    Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high


    Original     		PDF

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


    Original     		PDF DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    bq20851-V1P2

    Abstract: 103AT bq20851 bq29311 uniden
    Text: bq20851-V1P2 www.ti.com SLUS575 − AUGUST 2003 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq20851-V1P2 SLUS575 bq29311 16-Bit 103AT bq20851 uniden

    bq20851-V1P2

    Abstract: bq29311 103AT bq20851 li-ion 18650 battery
    Text: bq20851-V1P2 www.ti.com SLUS575 − AUGUST 2003 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1


    Original     		PDF bq20851-V1P2 SLUS575 bq29311 16-Bit 103AT bq20851 li-ion 18650 battery

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance


    OCR Scan     		PDF 2SK2826 O-220AB 2SK2826-S O-262 2SK2826-ZJ O-263 D11273EJ2V0DS00

    Untitled

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A


    OCR Scan     		PDF 2SK2796 12Otyp. ADE-208-534 oK2796

    Untitled

    Abstract: No abstract text available
    Text: 3SK297 Silicon N-Channel Dual Gate MOS FET HITACHI Application U H F /V H F RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 1. 2. 3. 4. 1120 Source Gatel Gate2 Drain ADE-208-389


    OCR Scan     		PDF 3SK297 ADE-208-389

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    MOS FET 1127

    Abstract: No abstract text available
    Text: TOSHIBA HN1L03FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE n3 HN1I F II HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Q l, Q2 COMMON • 1.25 ±0.1 6 Low Threshold Voltage Q l : Vth = 0.8~2.5V Q2 : Vt h = - 0 . 5 - -1 .5 V


    OCR Scan     		PDF HN1L03FU 1HilYJ-01IV MOS FET 1127

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    AM97C11CN

    Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
    Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits


    OCR Scan     		PDF