FOOTPRINT MO-229 2X3 SOLDERING
Abstract: CAT24 program eeprom 24c04 6 jedec package MO-229 UDFN CAT24C02VP2I-GT3A CAT24C02WI-GT3A MO-236 CAT24C02HU4I-GT3A CAT24C02TDE-GT3A cat24c04
Text: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized
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CAT24C01,
CAT24C02,
CAT24C04,
CAT24C08,
CAT24C16
16-Kb
751BD
TSOT-23
419AE
511AK
FOOTPRINT MO-229 2X3 SOLDERING
CAT24
program eeprom 24c04 6
jedec package MO-229 UDFN
CAT24C02VP2I-GT3A
CAT24C02WI-GT3A
MO-236
CAT24C02HU4I-GT3A
CAT24C02TDE-GT3A
cat24c04
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN3R0-30YLD
LFPAK56
LFPAK56
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BUK9Y14-40B
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
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BUK9Y14-40B
BUK9Y14-40B
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PH3120L
Abstract: 10S100
Text: PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH3120L
PH3120L
10S100
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BUK7Y13-40B
Abstract: automotive abs 10S100
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
BUK7Y13-40B
automotive abs
10S100
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Untitled
Abstract: No abstract text available
Text: PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and
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PSMN1R8-40YLC
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MO-23
Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Text: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as
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IHM36204QAS/ASG-60/70/80
THM362040A
TC514400ASJ
TC511000BFT
130ns
THM362040AS/ASG-60/70/80
THM362040AS/ASG
THM362040AS/ASG-60
TC514400ASJ
TC511000BFT
MO-23
THM362040ASG-60
MO23
CDQ2
THM362040ASG
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QTAN0002
Abstract: QTAN0002 secrets of a successful qtouch AT42QT1010-TSHR Secrets of a Successful QTouch Design AT42QT1010 QT1010 proximity sensor interfacing with microcontroller QT100A sot23-6 marking code 561 at42qt10
Text: Features • Number of Keys: • • • • • • • • • • • • • • • • – One – Configurable as either a single key or a proximity sensor Technology: – Patented spread-spectrum charge-transfer direct mode Key outline sizes: – 6 mm x 6 mm or larger (panel thickness dependent); widely different sizes and
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9541H
QTAN0002
QTAN0002 secrets of a successful qtouch
AT42QT1010-TSHR
Secrets of a Successful QTouch Design
AT42QT1010
QT1010
proximity sensor interfacing with microcontroller
QT100A
sot23-6 marking code 561
at42qt10
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PSMN7R0-30YLC
Abstract: No abstract text available
Text: LF PA K PSMN7R0-30YLC N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
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PSMN7R0-30YLC
PSMN7R0-30YLC
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PSMN6R0-30YL
Abstract: No abstract text available
Text: LF PA K PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN6R0-30YL
PSMN6R0-30YL
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FOOTPRINT MO-229 2X3 SOLDERING
Abstract: 24C32F 948AL C32F CAT24C32 517AX-01 marking code C5T 24c32 wp marking c5t YM 254
Text: CAT24C32 32-Kb I2C CMOS Serial EEPROM Description The CAT24C32 is a 32−Kb CMOS Serial EEPROM devices, internally organized as 4096 words of 8 bits each. It features a 32−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.
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CAT24C32
32-Kb
CAT24C32
32-byte
CAT24C32/D
FOOTPRINT MO-229 2X3 SOLDERING
24C32F
948AL
C32F
517AX-01
marking code C5T
24c32 wp
marking c5t
YM 254
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Untitled
Abstract: No abstract text available
Text: 10 15.24 ±0.25 DIM X + 0 .Z 5 - SEC TIO N A - A -KEEP OUT ZONE -165.00 MAX -148.00 MAX i 26.00 MAX 2X1 A 14.50 MIN (2X 4 127.83D A T E CODE (Y Y D D D )Z A A ^PAR T a - 5.00 NIN (2X) NO. 4222 □ E /11\ EX t PIN a 120- -PIN tt1 -11.50 NOTES: 1. -141.00-
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MO-237.
SD-78125-001
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MO-236
Abstract: MO-252 MO-236 MO-252 UDFN-8 517AZ-01 JEDEC MO-236/MO-252
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN8, 2x3 EXTENDED PAD CASE 517AZ−01 ISSUE O D DATE 23 JUL 2009 b A e L DAP SIZE 1.8 x 1.8 E2 E PIN #1 IDENTIFICATION A1 PIN #1 INDEX AREA D2 TOP VIEW SYMBOL MIN SIDE VIEW NOM MAX A 0.45 0.50 0.55 A1 0.00 0.02
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517AZ-01
MO-236/MO-252.
98AON42552E
517AZ
MO-236
MO-252
MO-236 MO-252
UDFN-8
517AZ-01
JEDEC MO-236/MO-252
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MOSFET D340
Abstract: No abstract text available
Text: PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN014-40YS
MOSFET D340
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4C530
Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
Text: PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN4R5-30YLC
4C530
003A MARKING
PSMN4R5-30YLC
PSMN4R5
4C530L
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948AL
Abstract: CAT24C64 Q100
Text: CAT24C64 64 kb I2C CMOS Serial EEPROM Description The CAT24C64 is a 64 kb CMOS Serial EEPROM device, internally organized as 8192 words of 8 bits each. It features a 32−byte page write buffer and supports the Standard 100 kHz , Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.
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CAT24C64
CAT24C64
32-byte
CAT24C64/D
948AL
Q100
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12945
Abstract: PH3830L
Text: PH3830L N-channel TrenchMOS logic level FET Rev. 03 — 2 March 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low thermal resistance
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PH3830L
M3D748
OT669
12945
PH3830L
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sot669
Abstract: PH5330E 12334
Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features
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PH5330E
M3D748
OT669
sot669
PH5330E
12334
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MO-235
Abstract: PSMN4R0-30YL
Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN4R0-30YL
PSMN4R0-30YL
MO-235
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NXP datasheets
Abstract: PSMN3R5-30YL
Text: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 14 October 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN3R5-30YL
PSMN3R5-30YL
NXP datasheets
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PSMN2R5-30YL
Abstract: No abstract text available
Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN2R5-30YL
PSMN2R5-30YL
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R4-40YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN1R0-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN1R2-30YLD
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LFPAK56
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