sot669
Abstract: PH5330E 12334
Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features
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PH5330E
M3D748
OT669
sot669
PH5330E
12334
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PH3230
Abstract: SOT669-LFPAK sot669 package
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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PH3230
M3D748
OT669
PH3230
SOT669-LFPAK
sot669 package
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.
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PHPT60603PY
OT669
LFPAK56)
PHPT60603NY.
AEC-Q101
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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sot669 package
Abstract: POWERSO-8 MO-235
Text: Package outline Plastic single-ended surface-mounted package LFPAK; Power-SO8 ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions)
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OT669
OT669
MO-235
sot669 package
POWERSO-8
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PH3230S
Abstract: No abstract text available
Text: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 02 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package. Product availability: PH3230S in SOT669 LFPAK .
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PH3230S
M3D748
PH3230S
OT669
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended surface-mounted package LFPAK56; Power-SO8 ; 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b X c A 1/2 e A (A3) A1 C q L detail X y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions)
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LFPAK56;
OT669
MO-235
sot669
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003NY
OT669
LFPAK56)
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003PY
OT669
LFPAK56)
PHPT61003NY
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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MO-235
Abstract: SOT669 sot669 package
Text: PDF: 2003 Feb 05 Philips Semiconductors Package outline Plastic single-ended surface mounted package Philips version LFPAK ; 4 leads A2 A E SOT669 C c2 b2 L1 E1 mounting base D1 D H L2 1 2 3 4 X e w M A b c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale
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OT669
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SOT669
sot669 package
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SOT669
Abstract: PH2925U MO-235 MO-235 FOOTPRINT
Text: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .
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PH2925U
M3D748
PH2925U
OT669
SOT669
MO-235
MO-235 FOOTPRINT
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SOT669
Abstract: sot669 package lfpak outline A2 diode LFPAK LFPAK package LFPAK package 5
Text: PDF: 2001 Aug 14 Philips Semiconductors Package outline Plastic single-ended surface mounted package LFPAK ; 4 leads SOT669 D A2 D1 A1 b1 mounting base HE E 1 2 3 4 e b c A 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 b b1
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OT669
SOT669
sot669 package
lfpak outline
A2 diode
LFPAK
LFPAK package
LFPAK package 5
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so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
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OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
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sot669
Abstract: PH3230
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 7 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK)
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PH3230
M3D748
OT669
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sot669
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SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
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OT669
OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
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SOT669
Abstract: MO-235 sot669 package
Text: Package outline Philips Semiconductors Plastic single-ended surface mounted package LFPAK ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 2.5 5 mm scale DIMENSIONS (mm are the original dimensions)
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OT669
MO-235
SOT669
MO-235
sot669 package
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LFPAK footprint
Abstract: PH2920 sot669 lfpak
Text: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).
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PH2920
M3D748
OT669
PH2920
LFPAK footprint
sot669
lfpak
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PH3230
Abstract: No abstract text available
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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M3D748
OT669
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sot669
Abstract: PH5330 09391
Text: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 07 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK)
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PH5330
M3D748
OT669
PH5330
sot669
09391
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PH2520U
Abstract: 11406
Text: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .
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PH2520U
M3D748
PH2520U
OT669
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