MJE3055T DATA Search Results

MJE3055T

Abstract: l5 transistor PNP MJE305 MJE2955T SGS-Thomson P011C SGS-Thomson MJE3055T mje3055T data
Contextual Info: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and

MJE2955T

Abstract: MJE3055T
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR

MJE2955T

Abstract: MJE3055T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS
Contextual Info: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and

MJE2955T-MJE3055T

Abstract: MJE2955T MJE3055T transistor MJE3055T
Contextual Info: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary

MJE3055T

Contextual Info: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and

MJE2955T

Abstract: MJE3055T MJE30*T MJE2955T ST mje3055T data
Contextual Info: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and

Contextual Info: r Z Z SGS-THOMSON & *im iO T iO gS MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor In Jedec TO-220 package. It is

Contextual Info: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is

MJE3055TTU

Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE3055

Abstract: MJE3055T
Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje3055t

Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

E3055T

Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955
Contextual Info: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

TL MJE2955T

Abstract: JF2955
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • Isolated Overmold Package 1500 Volts RMS Min • Electrically Similar to the Popular MJE3055T and MJE2955T

mje3055T data

Contextual Info: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes

pnp mje2955t

Abstract: MJE2955T MJE3055T mje3055T data
Contextual Info: ON Semiconductort PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes

pnp mje2955t

Abstract: MJE3055T MJE2955T
Contextual Info: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes

MJE2955TG

Abstract: mje3055t
Contextual Info: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features http://onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

transistor MJE3055T

Contextual Info: SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER

0035B2

Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND

power ic 501 amp

Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
Contextual Info: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )

MJE3055T

Contextual Info: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

Transistor MJF3055

Abstract: 221D AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Contextual Info: ON Semiconductort NPN Complementary Silicon Power Transistors MJF3055 PNP MJF2955 . . . specifically designed for general purpose amplifier and switching applications. • • • • • • • Isolated Overmold Package 1500 Volts RMS Min Electrically Similar to the Popular MJE3055T and MJE2955T