CMJE2955T
Abstract: MJE2955T MJE2955TG
Text: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free
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MJE2955T
O-220
MJE2955T
O-252
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
CMJE2955T
MJE2955TG
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mje2955t
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free
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MJE2955T
MJE2955T
O-220
O-252
O-220
O-252
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
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MJE2955T
Abstract: MJE3055T
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR
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O-220
MJE2955T
MJE3055T
MJE2955T,
C-120
MJE2955T
MJE3055T
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Untitled
Abstract: No abstract text available
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
MJE2955T
O-220
QW-R203-012
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MJE2955T
Abstract: No abstract text available
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
MJE2955T
O-220
200mA
QW-R203-012
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Untitled
Abstract: No abstract text available
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
O-220
200mA
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utc 1018
Abstract: transistor 1008 1008 transistor MJE2955T hFE-20 a 102 transistor
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
MJE2955T
O-252
QW-R209-010
utc 1018
transistor 1008
1008 transistor
hFE-20
a 102 transistor
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MJE2955T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free
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MJE2955T
O-220
MJE2955T
O-252
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
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MJE2955
Abstract: MJE2955T
Text: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE2955T
O-220
MJE2955
MJE2955T
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Untitled
Abstract: No abstract text available
Text: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE2955T
O-220
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mje2955t
Abstract: No abstract text available
Text: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE2955T
O-220
MJE2955TTU
O-220
mje2955t
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MJE2955T
Abstract: No abstract text available
Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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MJE2955T
MJE2955T
O-220
QW-R203-012
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MJE2955T PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ̈ ORDERI N G I N FORM AT I ON Ordering Number
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MJE2955T
O-220
MJE2955T
O-252
MJE2955TL-TA3-T
MJE2955TG-TA3-T
MJE2955TL-TN3-R
MJE2955TG-TN3-R
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pnp mje2955t
Abstract: MJE2955T NT 407 F TRANSISTOR MJE2955T-D MJE3055T mje3055T data
Text: MOTOROLA Order this document by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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MJE2955T/D
MJE2955T
MJE3055T
MJE2955T/D*
pnp mje2955t
MJE2955T
NT 407 F TRANSISTOR
MJE2955T-D
MJE3055T
mje3055T data
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MJD2955
Abstract: MJD3055 MJE2955T MJE3055T
Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND
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MJD2955
MJD3055
O-252
MJE2955T
MJE3055T
MJD2955
MJD3055
MJE2955T
MJE3055T
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Untitled
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. COMPLEMENTARY SILICON POWER TRANSISTORS PNP NPN MJE2955T MJE3055T .designed for use in general-purpose amplifier and switching applications FEATURES:
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MJE2955T
MJE3055T
10AMPERE
le-10A
IC-10AJB
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MJD2955
Abstract: MJE2955T
Text: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T
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MJD2955
MJE2955T
-500mA
MJD2955
MJE2955T
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Untitled
Abstract: No abstract text available
Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND
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MJD2955
MJD3055
O-252
MJE2955T
MJE3055T
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0035B2
Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND
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MJD2955
MJD3055
O-252
MJE2955T
MJE3055T
0035B2
MJE2955T ST
MJD2955
MJD3055
MJE2955T
MJE3055T
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MJE3055TG
Abstract: MJE2955TG MJE3055T MJE2955T
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS
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MJE2955T
MJE3055T
MJE3055TG
MJE2955TG
MJE3055T
MJE2955T
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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Untitled
Abstract: No abstract text available
Text: MJE2955T, MJE3055T MJE2955T MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER T— K- -1 4. COLLECTOR 4V •! - oi a 3 ; Jf~ T
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MJE2955T,
MJE3055T
MJE2955T
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MJE305
Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Text: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -
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MJE2955T
MJE3055T
MJE2955T,
MJE305
MJE3055T
MJE30*T
MJE2955T-MJE3055T
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MJE30*T
Abstract: MJE2955T transistor MJE3055T MJE3055T
Text: Ill MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9,63
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MJE2955T,
MJE3055T
MJE2955T
MJE3055T
MJE30*T
transistor MJE3055T
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