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    MJE2955T Price and Stock

    STMicroelectronics MJE2955T

    TRANS PNP 60V 10A TO220
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    DigiKey MJE2955T Tube 2,466 1
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    Avnet Americas MJE2955T Bulk 23 Weeks, 3 Days 1
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    Mouser Electronics MJE2955T 1,587
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    Verical MJE2955T 8,800 20
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    Future Electronics MJE2955T Tube 4,900 14 Weeks 50
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    MJE2955T Tube 14 Weeks 4,000
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    Bristol Electronics MJE2955T 48
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    Quest Components MJE2955T 30
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    MJE2955T 28
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    TME MJE2955T 499 1
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    Avnet Silica MJE2955T 2,450 15 Weeks 50
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    Win Source Electronics MJE2955T 18,000
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    onsemi MJE2955TG

    TRANS PNP 60V 10A TO220
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    DigiKey MJE2955TG Tube 724 1
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    Avnet Americas MJE2955TG Tube 950 11 Weeks 50
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    MJE2955TG Bulk 15 Weeks, 4 Days 1
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    Mouser Electronics MJE2955TG 7,566
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    Verical MJE2955TG 2,900 100
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    MJE2955TG 1,289 15
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    MJE2955TG 750 50
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    Arrow Electronics MJE2955TG 1,289 11 Weeks 1
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    MJE2955TG 753 11 Weeks 50
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    Newark MJE2955TG Bulk 58 1
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    RS MJE2955TG Bulk 1
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    Bristol Electronics MJE2955TG 342
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    Quest Components MJE2955TG 273
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    Rochester Electronics MJE2955TG 21 1
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    Avnet Silica MJE2955TG 12 Weeks 50
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    EBV Elektronik MJE2955TG 13 Weeks 50
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    Master Electronics MJE2955TG 2,900
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    Win Source Electronics MJE2955TG 2,580
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    onsemi MJE2955T

    TRANS PNP 60V 10A TO220
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    DigiKey MJE2955T Tube
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    Flip Electronics MJE2955TTU

    BIPOLAR (BJT) TRANSISTOR PNP 60
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJE2955TTU Tube 1,500
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    onsemi MJE2955TTU

    TRANS PNP 60V 10A TO220-3
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    Avnet Americas MJE2955TTU Tube 0 Weeks, 2 Days 1,786
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    Flip Electronics MJE2955TTU 12,000
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    Win Source Electronics MJE2955TTU 3,080
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    MJE2955T Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE2955T Continental Device India Plastic Power Transistors Original PDF
    MJE2955T Fairchild Semiconductor PNP Silicon Transistor Original PDF
    MJE2955T Fairchild Semiconductor PNP SILICON TRANSISTOR Original PDF
    MJE2955T Motorola 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS Original PDF
    MJE2955T On Semiconductor Complementary Silicon Plastic Power Transistors Original PDF
    MJE2955T Sinyork Mini size of Discrete semiconductor elements Original PDF
    MJE2955T STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
    MJE2955T USHA PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. Original PDF
    MJE2955T Wing Shing Computer Components PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) Original PDF
    MJE2955T Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJE2955T Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    MJE2955T Central Semiconductor Power Transistors Scan PDF
    MJE2955T Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan PDF
    MJE2955T Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    MJE2955T Fairchild Semiconductor PNP SILICON TRANSISTOR Scan PDF
    MJE2955T Mospec Complementary Silicon Power Transistor Scan PDF
    MJE2955T Mospec POWER TRANSISTORS(10A,60V,75W) Scan PDF
    MJE2955T Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE2955T Motorola European Master Selection Guide 1986 Scan PDF
    MJE2955T Unknown Shortform Transistor PDF Datasheet Short Form PDF

    MJE2955T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor MJE3055T

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER


    Original
    PDF MJE3055T/MJE2955T O-220 transistor MJE3055T

    221D

    Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


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    PDF MJF3055 MJF2955 MJE3055T MJE2955T E69369, u8000 MJF3055/D 221D AN1040 MJE2955T MJF2955 MJF3055

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


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    PDF MJE2955T O-220 200mA

    Untitled

    Abstract: No abstract text available
    Text: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T


    Original
    PDF MJF3055 MJF2955 AN1040.

    MJE2955T

    Abstract: No abstract text available
    Text: MJE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF MJE2955T O-220 MJE2955T

    transistor MJE3055T

    Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching


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    PDF MJE3055T MJE2955T 500kHz transistor MJE3055T transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955

    utc 1018

    Abstract: transistor 1008 1008 transistor MJE2955T hFE-20 a 102 transistor
    Text: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


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    PDF MJE2955T MJE2955T O-252 QW-R209-010 utc 1018 transistor 1008 1008 transistor hFE-20 a 102 transistor

    MJD2955

    Abstract: MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    PDF MJD2955 MJD3055 O-252 MJE2955T MJE3055T MJD2955 MJD3055 MJE2955T MJE3055T

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    MJD2955

    Abstract: MJE2955T
    Text: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


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    PDF MJD2955 MJE2955T -500mA MJD2955 MJE2955T

    CDIL MJE3055T

    Abstract: MJE2955T MJE3055T
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications


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    PDF MJE2955T MJE3055T O-220 C-120 MJE3055T-2955TRev 291102E CDIL MJE3055T

    3055t

    Abstract: MJE2955T MJE305 MJE3055T 75W PNP
    Text: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.


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    PDF MJE2955T, 3055T 400mA. 3055t MJE2955T MJE305 MJE3055T 75W PNP

    MJE2955T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252  ORDERING INFORMATION Ordering Number Lead Free


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    PDF MJE2955T O-220 MJE2955T O-252 MJE2955TL-TA3-T MJE2955TG-TA3-T MJE2955TL-TN3-R MJE2955TG-TN3-R

    MJE2955T

    Abstract: MJE3055T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and


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    PDF MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 MJE2955T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS

    MJE2955T

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R MJE2955T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28


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    PDF MJE2955T O-220AB -400mA -500mA, MJE2955T

    0035B2

    Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
    Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    PDF MJD2955 MJD3055 O-252 MJE2955T MJE3055T 0035B2 MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T

    mje3055T data

    Abstract: No abstract text available
    Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes


    Original
    PDF MJE2955T MJE3055T MJE3055T mje3055T data

    Untitled

    Abstract: No abstract text available
    Text: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


    Original
    PDF MJD2955 MJE2955T -500mA

    MJE2955T

    Abstract: MJE3055T
    Text: SavantIC Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage VCE sat = -1.1 Vdc (Max) @ IC =- 4 Adc


    Original
    PDF MJE2955T O-220 MJE3055T O-220) MJE2955T MJE3055T

    Untitled

    Abstract: No abstract text available
    Text: MJE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit Col lector-Base Voltage


    OCR Scan
    PDF MJE2955T

    TL MJE2955T

    Abstract: JF2955
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • Isolated Overmold Package 1500 Volts RMS Min • Electrically Similar to the Popular MJE3055T and MJE2955T


    OCR Scan
    PDF MJE3055T MJE2955T E69369, AN1040. TL MJE2955T JF2955

    Untitled

    Abstract: No abstract text available
    Text: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is


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    PDF MJE2955T MJE3055T MJE3055T O-220 MJE2955T.

    Untitled

    Abstract: No abstract text available
    Text: MJE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector-B ase Voltage


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    PDF MJE2955T 500kH

    Untitled

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON & *im iO T iO gS MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor In Jedec TO-220 package. It is


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    PDF MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 C08B1C SC0696C 300ns,